Energy-gap opening in a Bi(110) nanoribbon induced by edge reconstruction

Physical Review Letters

Volumn 109, Issue 24, 2012, Pages

  Sun, Jia Tao ^a,d   Huang, Han ^a,b   Wong, Swee Liang ^a,c   Gao, H J ^d   Feng, Yuan Ping ^a   Wee, Andrew Thye Shen ^a,b,c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b National University of Singapore   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY OF STATE; EDGE RECONSTRUCTION; ELECTRONIC DEVICE; EPITAXIAL GRAPHENE; GAP OPENING; METAL-TO-SEMICONDUCTOR TRANSITION; NANORIBBONS; ROOM TEMPERATURE; SCANNING TUNNELLING MICROSCOPY AND SPECTROSCOPY; STRAIN ENERGY RELEASE;

CALCULATIONS; ELECTRONIC STRUCTURE; ENERGY GAP; GRAPHENE; MONOLAYERS; NANOSTRUCTURES; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE;

BISMUTH;

EID: 84870872957     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.109.246804     Document Type: Article

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