SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 587, Issue 3, 2005, Pages 175-184

A crystallographic orientation transition and early stage growth characteristics of thin Bi films on HOPG

(3) Scott, S A a,b Kral, M V b Brown, S A a,b

a MACDIARMID INSTITUTE FOR ADVANCED MATERIALS AND NANOTECHNOLOGY (New Zealand)

b UNIVERSITY OF CANTERBURY (New Zealand)

Author keywords

Atomic force microscopy; Bismuth; Electron microscopy; Graphite; Growth; Self assembly; Surface morphology

Indexed keywords

BISMUTH; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; ELECTROMAGNETIC WAVE BACKSCATTERING; ELECTRON MICROSCOPY; ELECTRON SCATTERING; GRAPHITE; MORPHOLOGY; SELF ASSEMBLY; SURFACE STRUCTURE; SURFACE TREATMENT;

FERMI WAVELENGTH; HIGHLY ORDERED PYROLITIC GRAPHITE (HOPG); NANOMETERS; ULTRA-THIN BISMUTH FILMS;

ULTRATHIN FILMS;

EID: 22544481437 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/j.susc.2005.05.013 Document Type: Article

Times cited : (78)

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