Growth, structure and optical properties of silicon nanowires formed by metal-assisted chemical etching

Journal of Nanoelectronics and Optoelectronics

Volumn 7, Issue 6, 2012, Pages 602-606

  Gonchar, K A ^a   Osminkina, L A ^a   Galkin, R A ^a   Gongalsky, M B ^a   Marshov, V S ^a   Timoshenko, V Yu ^a   Kulmas, M N ^c   Solovyev, V V ^b   Kudryavtsev, A A ^b   Sivakov, V A ^c  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b INSTITUTE OF THEORETICAL AND EXPERIMENTAL BIOPHYSICS   (Russian Federation)

^c LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

Author keywords

Bio Imaging; Black Silicon; Nanowires; Photoluminescence; Silicon

Indexed keywords

AQUEOUS SUSPENSIONS; BIO-IMAGING; BLACK SILICON; BORON-DOPED; CHEMICAL ETCHING; IN-VITRO; METAL-ASSISTED CHEMICAL ETCHING; NANO-STRUCTURED; OPTICAL SPECTROSCOPY; PHOTOVOLTAIC APPLICATIONS; RADIATIVE RECOMBINATION; REFLECTION MEASUREMENTS; SILICON NANOWIRES; SINGLE CRYSTALLINE SILICON; SPECTRAL REGION; TOTAL REFLECTANCE; VISIBLE AND NEAR INFRARED;

ANTIREFLECTION COATINGS; ELECTRON MICROSCOPY; ETCHING; EXCITONS; HYDROFLUORIC ACID; NANOWIRES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; SUSPENSIONS (FLUIDS);

SILICON;

EID: 84870851046     PISSN: 1555130X     EISSN: 15551318     Source Type: Journal    
DOI: 10.1166/jno.2012.1401     Document Type: Article

References (22)

1. P. Yang R. Yan, and M. Fardy, Nano Lett. 10, 1529 (2010).
2. J. Hu, M. Ouyang, P. Yang, and C. M. Lieber, Nature 399, 48 (1999).
3. H. Fool H. Hartz, E. Ossei-Wusu, J. Carstensen, and O. Riemenschneider. Phys. Status Solidi RRL 4, 4 (2010).
4. G. Bronstrup, N. Jahr, C. Leiterer, A. Csaki, W. Fritzsche, and S. Christiansen, ACS Nano 4, 7113 (2010).
5. M. D. Kelzenberg, D. B. Turner-Evans, B. M. Kayes, M. A. Filler, M. C. Putnam, N. S. Lewis, and H. A. Atwater, Nano Lett. 8, 710 (2008).
6. V. Sivakov, G. Andrä, A. Gawlik, A. Berger, J. Plentz, F. Falk, and S. H. Christiansen, Nano Lett. 9, 1549 (2009).
7. A. I. Hochbaum, R. Fan, R. He, and P. Yang, Nano Lett. 5, 457 (2005).
8. Y. Cui, Q. Wei, H. Park, and C. M. Lieber, Science 293, 1289 (2001).
9. X. Wang and C. S. Ozkan, Nano Lett. 8, 398 (2008).
10. V. A. Sivakov, F. Voigt, A. Berger, G. Bauer, and S. H. Christiansen, Phys. Rev. B 82, 125446 (2010).
11. V. Yu. Timoshenko, K. A. Gonchar, L. A. Golovan, A. I. Efimova, V. A. Sivakov, A. Dellith, and S. H. Christiansen, Journal of Nanoelectronics and Optoelectronics 6, 519 (2011).
12. R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4, 89 (1964).
13. Z. Huang, H. Fang, and J. Zhu, Adv. Mater. 19, 744 (2007).
14. Y. Cui, L. J. Lauhon, M. S. Gudiksen, J. Wang, and C. M. Lieber, Appl. Phys. Lett. 78, 2214 (2001).
15. F. M. Ross, J. Tersoff, and M. C. Reuter, Phys. Rev. Lett. 95, 146104 (2005).
16. L. Boarino, D. Imbraguglio, E. Enrico, N. De Leo, F. Celegato, P. Tiberto, N. Pugno, and G. Amato, Phys. Status Solidi A 208, 1412 (2011).
17. Z. Huang, N. Geyer, P. Werner, J. de Boor, and U. Gösele, Adv. Mater. 23, 285 (2011).
18. A. G. Nassiopoulou, V. Gianneta, and C. Katsogridakis, Nanoscale Research Letters 6, 597 (2011).
19. M. Lv, S. Su, Y. He, Q. Huang, W. Hu, D. Li, C. Fan, and S.-T. Lee, Adv. Mater. 22, 5463 (2010).
20. W. Theiss, Surf. Science Rep. 29, 91 (1997).
21. D. Kovalev, H. Heckler, G. Polisski, and F. Koch, Phys. Stat. Sol (b) 215, 871 (1999).
22. G. J. Doherty and H. T. McMahon, Annual Review Biochem. 78, 31 (2009).