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Volumn 318, Issue 1, 2011, Pages 1179-1183
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Stacking fault in Bi2Te3 and Sb2Te 3 single crystals
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Author keywords
A1. X ray diffraction; A2. Single crystal growth; A2. Zone melting; B1. Bismuth compounds; B1. Tellurites; B2. Semiconducting materials
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Indexed keywords
A2. SINGLE CRYSTAL GROWTH;
A2. ZONE MELTING;
B1. BISMUTH COMPOUNDS;
B1. TELLURITES;
SEMICONDUCTING MATERIALS;
ANTIMONY;
BISMUTH;
BISMUTH COMPOUNDS;
CITRIC ACID;
CRYSTAL GROWTH;
CRYSTAL STRUCTURE;
CRYSTALLIZATION;
DIFFRACTION;
DISLOCATIONS (CRYSTALS);
ETCHING;
MELTING;
METALLURGY;
NITRIC ACID;
SEMICONDUCTOR GROWTH;
SOLIDS;
X RAY DIFFRACTION;
X RAYS;
ZONE MELTING;
SINGLE CRYSTALS;
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EID: 79952737669
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.10.213 Document Type: Conference Paper |
Times cited : (17)
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References (18)
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