Structure and optical properties of a-plane ZnO/Zn0.9Mg 0.1O multiple quantum wells grown on r-plane sapphire substrates by pulsed laser deposition

Journal of Applied Physics

Volumn 112, Issue 10, 2012, Pages

  Li, Y ^a   Pan, X H ^a   Zhang, Y Z ^a   He, H P ^a   Jiang, J ^a   Huang, J Y ^a   Ye, C L ^a   Ye, Z Z ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; BLUE SHIFT; EMISSION ENERGIES; EXCITON EMISSION; FREE EXCITONS; LOCALIZED EXCITON; LOW TEMPERATURES; NON-RADIATIVE RECOMBINATION CHANNELS; QUANTUM CONFINEMENT EFFECTS; RATE EQUATIONS; SAPPHIRE SUBSTRATES; THERMAL QUENCHING; WELL WIDTH; ZNO;

EXCITONS; LASERS; OPTICAL PROPERTIES; PULSED LASER DEPOSITION; QUENCHING; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84870724213     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4767462     Document Type: Article

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