Room temperature excitonic spontaneous and stimulated emission properties in ZnO/MgZnO multiple quantum wells grown on sapphire substrate

Journal of Physics D: Applied Physics

Volumn 40, Issue 21, 2007, Pages 6541-6544

  Sun, J W ^a,b   Lu, Y M ^a   Liu, Y C ^a,c   Shen, D Z ^a   Zhang, Z Z ^a   Li, B H ^a   Zhang, J Y ^a   Yao, B ^a   Zhao, D X ^a   Fan, X W ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c NORTHEAST NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; EXCITONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE; STIMULATED EMISSION; ZINC OXIDE;

EXCITATION DENSITIES; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; STIMULATED EMISSION PROPERTIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 35549005995     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/21/012     Document Type: Article

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