Temperature dependent ablation threshold in silicon using ultrashort laser pulses

Journal of Applied Physics

Volumn 112, Issue 10, 2012, Pages

  Thorstensen, Jostein ^a,b   Erik Foss, Sean ^a  

^a INSTITUTE FOR ENERGY TECHNOLOGY   (Norway)

^b UNIVERSITY OF OSLO   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

ABLATION THRESHOLDS; ACOUSTIC PHONONS; EXCITED ELECTRONS; LASER FLUENCES; LASER LIGHTS; LINEAR ABSORPTION COEFFICIENT; NUMBER DENSITY; PHYSICAL PROCESS; ROOM TEMPERATURE; SILICON PROCESSING; SILICON SUBSTRATES; SIMULATED REDUCTION; SUBSTRATE HEATING; SUBSTRATE TEMPERATURE; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; THERMAL EQUILIBRIUMS; THERMODYNAMIC MODEL; THREE-WAVELENGTHS; TIME-SCALES; TWO TEMPERATURE MODEL; TWO-PHOTON ABSORPTIONS; VAPORIZATION TEMPERATURE; VISIBLE-WAVELENGTH RANGE; WAVELENGTH DEPENDENCE;

ABLATION; CARRIER CONCENTRATION; DROPS; ELECTRON DENSITY MEASUREMENT; ELECTRONS; IMPACT IONIZATION; LASERS; SILICON; TWO PHOTON PROCESSES; WAVELENGTH;

ULTRASHORT PULSES;

EID: 84870689190     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4766380     Document Type: Article

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