Influence of pulse duration in picosecond laser ablation of silicon nitride layers

Energy Procedia

Volumn 8, Issue , 2011, Pages 614-619

  Schulz Ruhtenberg, Malte ^a   Trusheim, Daniel ^a   Das, Jo ^b   Krantz, Stephan ^c   Wieduwilt, Jan ^d  

^a FRAUNHOFER INSTITUTE FOR LASER TECHNOLOGY   (Germany)

^b IMEC   (Belgium)

^c Solland Solar Cells BV   (Netherlands)

^d TRUMPF LASER UND SYSTEMTECHNIK GMBH   (Germany)

Author keywords

Laser ablation; Multicrystalline solar cells; Picosecond lasers; Silicon nitride; Ultra short pulse lasers

Indexed keywords

ABLATION; LASER ABLATION; NITRIDES; SILICON; SILICON NITRIDE; SOLAR CELLS; ULTRAFAST LASERS; ULTRASHORT PULSES;

BACK-CONTACT CELLS; DIELECTRIC COATINGS; MULTICRYSTALLINE SOLAR CELLS; PICOSECOND LASER; PICOSECOND LASER ABLATION; SELECTIVE ABLATIONS; SELECTIVE EMITTER DOPING; ULTRA-SHORT PULSE LASER;

LASER MATERIALS PROCESSING;

EID: 80052101303     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.06.191     Document Type: Conference Paper

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