SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 112, Issue 10, 2012, Pages

A computational study of graphene silicon contact

(3) Chauhan, Jyotsna a Rinzler, Andrew b Guo, Jing a

a J Crayton Pruitt Family Department of Biomedical Engineering (United States)

b University of Florida (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BOTTOM GATE; CARRIER TRANSPORT EQUATION; COMPUTATIONAL STUDIES; CONTACT BARRIER HEIGHT; CONTACT MATERIAL; CONTINUOUS FILMS; DOPING DENSITIES; GRAPHENE LAYERS; METAL-SEMICONDUCTOR CONTACTS; ORDERS OF MAGNITUDE;

CONTACT RESISTANCE; MONOLAYERS; POISSON EQUATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON; TRANSPORT PROPERTIES;

GRAPHENE;

EID: 84870660319 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4759152 Document Type: Article

Times cited : (9)

References (35)

1
- 7444220645
- 10.1126/science.1102896
- K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004). 10.1126/science.1102896
- (2004) Science , vol.306 , pp. 666
- Novoselov, K.S.¹ Geim, A.K.² Morozov, S.V.³ Jiang, D.⁴ Zhang, Y.⁵ Dubonos, S.V.⁶ Grigorieva, I.V.⁷ Firsov, A.A.⁸

2
- 27744475163
- 10.1038/nature04235
- Y. Zhang, Y.-W. Tan, H. L. Stormer, and P. Kim, Nature 438, 201-204 (2005). 10.1038/nature04235
- (2005) Nature , vol.438 , pp. 201-204
- Zhang, Y.¹ Tan, Y.-W.² Stormer, H.L.³ Kim, P.⁴

3
- 27744534165
- 10.1038/nature04233
- K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos, and A. A. Firsov, Nat. Lett. 438, 197 (2005). 10.1038/nature04233
- (2005) Nat. Lett. , vol.438 , pp. 197
- Novoselov, K.S.¹ Geim, A.K.² Morozov, S.V.³ Jiang, D.⁴ Katsnelson, M.I.⁵ Grigorieva, I.V.⁶ Dubonos, S.V.⁷ Firsov, A.A.⁸

4
- 40749140712
- 10.1103/PhysRevLett.100.016602
- S. V. Morozov, K. S. Novoselov, M. I. Katsnelson, F. Schedin, D. C. Elias, J. A. Jaszczak, and A. K. Gleim, Phys. Rev. Lett. 100, 016602 (2008). 10.1103/PhysRevLett.100.016602
- (2008) Phys. Rev. Lett. , vol.100 , pp. 016602
- Morozov, S.V.¹ Novoselov, K.S.² Katsnelson, M.I.³ Schedin, F.⁴ Elias, D.C.⁵ Jaszczak, J.A.⁶ Gleim, A.K.⁷

5
- 41849125958
- 10.1038/nnano.2008.58
- J.-H. Chen, C. Jhang, S. Xiao, M. Ishigami, and M. S. Fuhrer, Nat. Nanotechnol. 3, 206-209 (2008). 10.1038/nnano.2008.58
- (2008) Nat. Nanotechnol. , vol.3 , pp. 206-209
- Chen, J.-H.¹ Jhang, C.² Xiao, S.³ Ishigami, M.⁴ Fuhrer, M.S.⁵

6
- 77952911108
- 10.1021/nn901587x
- L. G. De Arco, Y. Zhang, C. W. Schlenke, K. Ryu, M. E. Thompson, and C. Zho, ACS Nano 5, 2865-2873 (2010). 10.1021/nn901587x
- (2010) ACS Nano , vol.5 , pp. 2865-2873
- De Arco, L.G.¹ Zhang, Y.² Schlenke, C.W.³ Ryu, K.⁴ Thompson, M.E.⁵ Zho, C.⁶

7
- 51349127170
- 10.1038/nnano.2008.215
- Y. Henandez, V. Nicolosi, M. Lotya, F. M. Blighe, Z. Sun, S. De, I. T. McGovern, B. Holland, and J. N. Coleman, Nat. Nanotechnol. 3, 563-568 (2008). 10.1038/nnano.2008.215
- (2008) Nat. Nanotechnol. , vol.3 , pp. 563-568
- Henandez, Y.¹ Nicolosi, V.² Lotya, M.³ Blighe, F.M.⁴ Sun, Z.⁵ De, S.⁶ McGovern, I.T.⁷ Holland, B.⁸ Coleman, J.N.⁹

8
- 77956430820
- 10.1038/nnano.2010.132
- S. Bae, H. Kim, Y. Lee, X. Xu, J.-S. Park, Y. Zheng, J. BalaKumar, T. Lei, H. R. Kim, Y. Song, Y.-J. Kim, K.S. Kim, B. Ozyilmaz, J.-H. Ahn, B. H. Hong, and S. Lijima, Nat. Nanotechnol. 5, 574-578 (2010). 10.1038/nnano.2010.132
- (2010) Nat. Nanotechnol. , vol.5 , pp. 574-578
- Bae, S.¹ Kim, H.² Lee, Y.³ Xu, X.⁴ Park, J.-S.⁵ Zheng, Y.⁶ Balakumar, J.⁷ Lei, T.⁸ Kim, H.R.⁹ Song, Y.¹⁰ Kim, Y.-J.¹¹ Kim, K.S.¹² Ozyilmaz, B.¹³ Ahn, J.-H.¹⁴ Hong, B.H.¹⁵ Lijima, S.¹⁶

9
- 43449107662
- 10.1038/nnano.2008.83
- G. Eda, G. Fanchini, and M. Chhowalla, Nat. Nanotechnol. 3, 270-274 (2008). 10.1038/nnano.2008.83
- (2008) Nat. Nanotechnol. , vol.3 , pp. 270-274
- Eda, G.¹ Fanchini, G.² Chhowalla, M.³

10
- 75749135283
- 10.1021/nn900728d
- J. Wu, M. Agrawal, H. A. Becerril, Z. Bao, Z. Liu, Y. Chen, and P. Peumans, ACS Nano 4, 43-48 (2010). 10.1021/nn900728d
- (2010) ACS Nano , vol.4 , pp. 43-48
- Wu, J.¹ Agrawal, M.² Becerril, H.A.³ Bao, Z.⁴ Liu, Z.⁵ Chen, Y.⁶ Peumans, P.⁷

11
- 77957322175
- 10.1021/nn1015874
- Z. Yin, S. Sun, T. Salim, S. Wu, X. Huang, Q. He, Y. M. Lam, and H. Zhang, ACS Nano 4, 5263-5268 (2010). 10.1021/nn1015874
- (2010) ACS Nano , vol.4 , pp. 5263-5268
- Yin, Z.¹ Sun, S.² Salim, T.³ Wu, S.⁴ Huang, X.⁵ He, Q.⁶ Lam, Y.M.⁷ Zhang, H.⁸

12
- 79952030556
- 10.1021/jz101639v
- P. V. Kamat, J. Phys. Chem. Lett. 2, 242-251 (2011). 10.1021/jz101639v
- (2011) J. Phys. Chem. Lett. , vol.2 , pp. 242-251
- Kamat, P.V.¹

13
- 77955213063
- 10.1002/adma.200904383
- X. Li, H. Zhu, K. Wang, A. Cao, J. Wei, C. Li, Y. Jia, Z. Li, X. Li, and D. Wu, Adv. Mater. 22, 2743-2748 (2010). 10.1002/adma.200904383
- (2010) Adv. Mater. , vol.22 , pp. 2743-2748
- Li, X.¹ Zhu, H.² Wang, K.³ Cao, A.⁴ Wei, J.⁵ Li, C.⁶ Jia, Y.⁷ Li, Z.⁸ Li, X.⁹ Wu, D.¹⁰

14
- 83455163978
- 10.1063/1.3665404
- T. Feng, D. Xie, Y. Lin, Y. Zang, T. Ren, R. Song, H. Zhao, H. Tian, X. Li, H. Zhu, and L. Liu, App. Phys. Lett. 99, 233505 (2011). 10.1063/1.3665404
- (2011) App. Phys. Lett. , vol.99 , pp. 233505
- Feng, T.¹ Xie, D.² Lin, Y.³ Zang, Y.⁴ Ren, T.⁵ Song, R.⁶ Zhao, H.⁷ Tian, H.⁸ Li, X.⁹ Zhu, H.¹⁰ Liu, L.¹¹

15
- 77956205162
- 10.1063/1.3464319
- K. Ihm, J. T. Lim, K.-J. Lee, J. W. Kwon, T.-H. Kang, S. Chung, S. Bae, J. H. Kim, B. H. Hong, and G. Y. Yeom, Appl. Phys. Lett. 97, 032113 (2010). 10.1063/1.3464319
- (2010) Appl. Phys. Lett. , vol.97 , pp. 032113
- Ihm, K.¹ Lim, J.T.² Lee, K.-J.³ Kwon, J.W.⁴ Kang, T.-H.⁵ Chung, S.⁶ Bae, S.⁷ Kim, J.H.⁸ Hong, B.H.⁹ Yeom, G.Y.¹⁰

16
- 34548388792
- 10.1038/nmat1967
- F. Schedin, A. K. Geim, S. V. Morozov, E. W. Hill, P. Blake, M. I. Katsnelson, and K. S. Novoselov, Nat. Mater. 6, 652-655 (2007). 10.1038/nmat1967
- (2007) Nat. Mater. , vol.6 , pp. 652-655
- Schedin, F.¹ Geim, A.K.² Morozov, S.V.³ Hill, E.W.⁴ Blake, P.⁵ Katsnelson, M.I.⁶ Novoselov, K.S.⁷

17
- 77956149871
- 10.1021/jp104459s
- M. Shafiei, P. G. Spizzirri, R. Arsat, J. Yu, J. D. Plessis, S. Dubin, R. B. Kaner, K. Kalantar-zadeh, and W. Wlodraski, J. Phys. Chem. C 114, 13796-13801 (2010). 10.1021/jp104459s
- (2010) J. Phys. Chem. C , vol.114 , pp. 13796-13801
- Shafiei, M.¹ Spizzirri, P.G.² Arsat, R.³ Yu, J.⁴ Plessis, J.D.⁵ Dubin, S.⁶ Kaner, R.B.⁷ Kalantar-Zadeh, K.⁸ Wlodraski, W.⁹

18
- 72549085241
- 10.1038/nnano.2009.292
- F. Xia, T. Mueller, Y.-M. Lin, A. Valdes-Garcia, and Ph. Avouris, Nat. Nanotechol. 4, 839-843 (2009). 10.1038/nnano.2009.292
- (2009) Nat. Nanotechol. , vol.4 , pp. 839-843
- Xia, F.¹ Mueller, T.² Lin, Y.-M.³ Valdes-Garcia, A.⁴ Avouris, Ph.⁵

19
- 84856750378
- 10.1038/ncomms1656
- L. Prechtel, L. Song, L. D. Schuh, P. Ajayan, W. Wegschieder, and A. W. Holleitner, Nature Commun. 3, 646 (2011). 10.1038/ncomms1656
- (2011) Nature Commun. , vol.3 , pp. 646
- Prechtel, L.¹ Song, L.² Schuh, L.D.³ Ajayan, P.⁴ Wegschieder, W.⁵ Holleitner, A.W.⁶

20
- 54949143973
- 10.1002/adma.200800601
- B. Liu, M. A. McCarthy, Y. Yoon, D. Y. Kim, Z. Wu, F. So, Adv. Mater. 20, 3605-3609 (2008). 10.1002/adma.200800601
- (2008) Adv. Mater. , vol.20 , pp. 3605-3609
- Liu, B.¹ McCarthy, M.A.² Yoon, Y.³ Kim, D.Y.⁴ Wu, Z.⁵ So, F.⁶

21
- 84870670014
- S. Subhash and M. H. Chowdhury, International Symposium on Integrated Circuits (ISIC) (2009), pp. 240-243.
- (2009) International Symposium on Integrated Circuits (ISIC) , pp. 240-243
- Subhash, S.¹ Chowdhury, M.H.²

22
- 34548162207
- 10.1021/nl070961c
- J. Wei, Y. Jia, Q. Shu, K. Wang, D. Zhuang, G. Zhang, Z. Wang, J. Luo, A. Cao, and D. Wu, Nano Lett. 7, 2317-2321 (2007). 10.1021/nl070961c
- (2007) Nano Lett. , vol.7 , pp. 2317-2321
- Wei, J.¹ Jia, Y.² Shu, Q.³ Wang, K.⁴ Zhuang, D.⁵ Zhang, G.⁶ Wang, Z.⁷ Luo, J.⁸ Cao, A.⁹ Wu, D.¹⁰

23
- 57349094709
- 10.1002/adma.200801810
- Y. Jia, P. Li, J. Wei, A. Cao, K. Wang, C. Li, D. Zhuang, H. Zhu, and D. Wu, Adv. Mater. 20, 4594 (2008). 10.1002/adma.200801810
- (2008) Adv. Mater. , vol.20 , pp. 4594
- Jia, Y.¹ Li, P.² Wei, J.³ Cao, A.⁴ Wang, K.⁵ Li, C.⁶ Zhuang, D.⁷ Zhu, H.⁸ Wu, D.⁹

24
- 79955910805
- 10.1021/nl104364c
- C.-C. Cheng, M. Aykol, C.-C. Chang, A. F. J. Levi, and S. B. Cronin, Nano. Lett. 11, 1863-1867 (2011). 10.1021/nl104364c
- (2011) Nano. Lett. , vol.11 , pp. 1863-1867
- Cheng, C.-C.¹ Aykol, M.² Chang, C.-C.³ Levi, A.F.J.⁴ Cronin, S.B.⁵

25
- 71949120734
- 10.1063/1.3268788
- S. Tongay, T. Schumann, and A. F. Hebard, Appl. Phys. Lett. 95, 222103 (2009). 10.1063/1.3268788
- (2009) Appl. Phys. Lett. , vol.95 , pp. 222103
- Tongay, S.¹ Schumann, T.² Hebard, A.F.³

26
- 77952907880
- 10.1021/nn1005478
- Y. Shi, K. K. Kim, A. Reina, M. Hofmann, L.-J. Li, and J. Kong, Acs Nano 4, 2689-2694 (2010). 10.1021/nn1005478
- (2010) Acs Nano , vol.4 , pp. 2689-2694
- Shi, Y.¹ Kim, K.K.² Reina, A.³ Hofmann, M.⁴ Li, L.-J.⁵ Kong, J.⁶

27
- 79951951808
- 10.1016/j.carbon.2011.01.029
- S. Tongay, T. Schumann, X. Miao, B. R. Appleton, and A. F. Hebard, Carbon 49, 2033-2038 (2011). 10.1016/j.carbon.2011.01.029
- (2011) Carbon , vol.49 , pp. 2033-2038
- Tongay, S.¹ Schumann, T.² Miao, X.³ Appleton, B.R.⁴ Hebard, A.F.⁵

28
- 0004005306
- (Wiley, Hoboken).
- S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (Wiley, Hoboken, 2007).
- (2007) Physics of Semiconductor Devices
- Sze, S.M.¹ Ng, K.K.²

29
- 66249123595
- 10.1126/science.1170335
- X. Wang, Science 324, 768-771 (2009). 10.1126/science.1170335
- (2009) Science , vol.324 , pp. 768-771
- Wang, X.¹

30
- 84860320663
- 10.1063/1.4705300
- G. Zhang and Q. Shi, Appl. Phys. Lett. 100, 173104 (2012). 10.1063/1.4705300
- (2012) Appl. Phys. Lett. , vol.100 , pp. 173104
- Zhang, G.¹ Shi, Q.²

31
- 0035890648
- 10.1103/PhysRevB.64.205310
- R. T. Tung, Phys. Rev. Lett. B 64, 205310 (2001). 10.1103/PhysRevB.64. 205310
- (2001) Phys. Rev. Lett. B , vol.64 , pp. 205310
- Tung, R.T.¹

32
- 84924156123
- (Cambridge University Press, Cambridge, UK).
- S. Datta, Quantum Transport: Atom to Transistor (Cambridge University Press, Cambridge, UK 2005).
- (2005) Quantum Transport: Atom to Transistor
- Datta, S.¹

33
- 0003964324
- (Plenum, New York).
- G. D. Mahan, Many Particle Physics (Plenum, New York, 1981).
- (1981) Many Particle Physics
- Mahan, G.D.¹

34
- 0004251329
- (Addison-Wesley).
- R. F. Pierret, Semiconductor Device Fundamentals (Addison-Wesley, 1996).
- (1996) Semiconductor Device Fundamentals
- Pierret, R.F.¹

35
- 33344468012
- 10.1103/PhysRevLett.96.076802
- N. Nemec, D. Tománek, and G. Cuniberti, Phys. Rev. Lett. 96, 076802 (2006). 10.1103/PhysRevLett.96.076802
- (2006) Phys. Rev. Lett. , vol.96 , pp. 076802
- Nemec, N.¹ Tománek, D.² Cuniberti, G.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.