InAs quantum-well MOSFET (Lg = 100 nm) with record high g m, fT and fmax

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2012, Pages 179-180

  Kim, T W ^a   Hill, R J W ^a   Young, C D ^a   Veksler, D ^a   Morassi, L ^b   Oktybrshky, S ^c   Oh, J ^a   Kang, C Y ^a   Kim, D H ^c   Del Alamo, J A ^d   Hobbs, C ^a   Kirsch, P D ^a   Jammy, R ^a  

^a SEMATECH   (United States)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c CNSE ^*  (United States)

^d MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE STACKS; HIGH FREQUENCY PERFORMANCE; HIGH MOBILITY; INAS; MOS-FET; MOSFETS;

MOSFET DEVICES; SEMICONDUCTOR QUANTUM WELLS;

INDIUM ARSENIDE;

EID: 84866554333     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2012.6242520     Document Type: Conference Paper

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