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Solid State Sciences

Volumn 14, Issue 11-12, 2012, Pages 1578-1583

Self-compensation property of β-rhombohedral boron doped with high Li concentration

(4) Hyodo, H a Nezu, A a Soga, K a Kimura, K b

a TOKYO UNIVERSITY OF SCIENCE (Japan)

b UNIVERSITY OF TOKYO (Japan)

Author keywords

Borides; Defects; Doping; Electrical conductivity; Electronic structure; Intercalation compounds

Indexed keywords

B ATOMS; BORON-DOPED; CRYSTALLINE STRUCTURE; ELECTRICAL CONDUCTIVITY; ELECTRICAL CONDUCTIVITY MEASUREMENTS; ELECTRON-DOPING; ELEMENTAL SEMICONDUCTORS; HIGH CONCENTRATION; ICOSAHEDRAL CLUSTERS; MG-DOPING; SELF-COMPENSATION; STAINLESS STEEL TUBE;

ATOMIC ABSORPTION SPECTROMETRY; BORIDES; DEFECTS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; INTERCALATION COMPOUNDS; RIETVELD METHOD; TUBULAR STEEL STRUCTURES; X RAY DIFFRACTION;

SEMICONDUCTOR DOPING;

EID: 84870545954 PISSN: 12932558 EISSN: None Source Type: Journal
DOI: 10.1016/j.solidstatesciences.2012.01.026 Document Type: Conference Paper

Times cited : (15)

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