Valence control of α-rhombohedral boron by electronic doping

Journal of Physics Condensed Matter

Volumn 19, Issue 36, 2007, Pages

  Dekura, Haruhiko ^a   Shirai, Koun ^a   Katayama Yoshida, Hiroshi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; ENTHALPY; LITHIUM; MOLECULAR STRUCTURE; SUPERCONDUCTING MATERIALS;

PSEUDOPOTENTIAL METHOD; RHOMBOHEDRAL BORON; UTILIZES HIGH PRESSURE;

SEMICONDUCTOR DOPING;

EID: 34548671887     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/19/36/365241     Document Type: Article

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