Mg-doping experiment and electrical transport measurement of boron nanobelts

Journal of Solid State Chemistry

Volumn 179, Issue 9, 2006, Pages 2799-2804

  Kirihara, K ^a   Hyodo, H ^b   Fujihisa, H ^a   Wang, Z ^a   Kawaguchi, K ^a   Shimizu, Y ^a   Sasaki, T ^a   Koshizaki, N ^a   Soga, K ^c   Kimura, K ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Boron; Carrier mobility; Gate modulation; Hopping conduction; I V characteristics; Mg vapor diffusion; Nanobelt; Tetragonal crystal

Indexed keywords

ACTIVATION ENERGY; CARRIER MOBILITY; CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC VARIABLES MEASUREMENT; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SUPERCONDUCTING MATERIALS; THERMAL EFFECTS;

GATE MODULATION; HOPPING CONDUCTION; MG VAPOR DIFFUSION; NANOBELTS; TETRAGONAL CRYSTAL;

BORON;

EID: 33747195560     PISSN: 00224596     EISSN: 1095726X     Source Type: Journal    
DOI: 10.1016/j.jssc.2006.01.015     Document Type: Article

References (18)

1. Cao L.M., Zhang Z., Sun L.L., Gao C.X., He M., Wang Y.Q., Li Y.C., Zhang X.Y., Li G., Zhang J., and Wang W.K. Adv. Mater. 13 (2001) 1701-1704
2. Wang Y.Q., and Duan X.F. Appl. Phys. Lett. 82 (2003) 272-274
3. Xu T.T., Zheng J.G., Wu N., Nicholls A.W., Roth J.R., Dikin D.A., and Ruoff R.S. Nano Lett. 4 (2004) 963-968
4. Otten C.J., Lourie O.R., Yu M.F., Cowley J.M., Dyer M.J., Ruoff R.S., and Buhro W.E. J. Am. Chem. Soc. 124 (2002) 4564-4565
5. Wang D., Lu J.G., Otten C.J., and Buhro W.E. Appl. Phys. Lett. 83 (2003) 5280-5282
6. Wang Z., Shimizu Y., Sasaki T., Kawaguchi K., Kimura K., and Koshizaki N. Chem. Phys. Lett. 368 (2003) 663-667
7. Kirihara K., Wang Z., Kawaguchi K., Shimizu Y., Sasaki T., Koshizaki N., Soga K., and Kimura K. Appl. Phys. Lett. 86 (2005) 212101-1-3
8. Werheit H., and Schmechel R. Boron. In: Madelung O. (Ed). Landolt-Bornstein New Series, Group III vol. 41C (1998), Springer, Berlin 3-148
9. Gunji S., and Kamimura H. Phys. Rev. B 54 (1996) 13665-13673
10. Calandra M., Vast N., and Mauri F. Phys. Rev. B 69 (2004) 224505-1-5
11. Soga K., Oguri A., Araake S., Terauchi M., Fujiwara A., and Kimura K. J. Solid State Chem. 177 (2004) 498-506
12. Wu Y., Messer B., and Yang P. Adv. Mater. 13 (2001) 1487-1489
13. Yang Q., Sha J., Ma X., Ji Y., and Yang D. Supercond. Sci. Technol. 17 (2004) L31-L33
14. Cao L., Zhang Z., Wen H., and Wang W. Appl. Phys. Lett. 86 (2005) 123113-1-3
15. Matsuda H., Nakayama T., Kimura K., Murakami Y., Suematsu H., Kobayashi M., and Higashi I. Phys. Rev. B 52 (1995) 6102-6110
16. Sze S.M. Physics of Semiconductor Devices (1981), Wiley, New York
17. Wang Z.L. Nanowires and Nanobelts: Materials, Properties and Devices (2003), Kluwer Academic Publishers, Dordrecht
18. Nagamatsu J., Nakagawa N., Muranaka T., Zenitani Y., and Akimitsu J. Nature (London) 410 (2001) 63-64