Valence control and metallization of boron by electronic doping

Physica B: Condensed Matter

Volumn 401-402, Issue , 2007, Pages 702-705

  Dekura, H ^a   Shirai, K ^a   Katayama Yoshida, H ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Boron; Groups III V; Highly doped semiconductor; Theory

Indexed keywords

CRYSTAL IMPURITIES; METALLIZING; PRESSURE EFFECTS; SEMICONDUCTOR DOPING;

ELECTRONIC DOPING; HIGHLY DOPED SEMICONDUCTOR;

BORON;

EID: 36048970095     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.09.056     Document Type: Article

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