Structural- and electronic-property investigations on metal-doped β-rhombohedral boron

Journal of Physics and Chemistry of Solids

Volumn 57, Issue 6-8, 1996, Pages 1167-1174

  Matsuda, H ^a   Tanaka, N ^a   Nakayama, T ^a   Kimura, K ^a   Murakami, Y ^a,c   Suematsu, H ^a   Kobayashi, M ^b   Higashi, I ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^c National Laboratory for High Energy Physics   (Japan)

Author keywords

A. Fullerenes; B. Semiconductors; D. Electrical conductivity; D. Electronic structure

Indexed keywords

BORON; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; INSULATING MATERIALS; PARAMAGNETISM; SEMICONDUCTOR MATERIALS;

ICOSAHEDRAL CLUSTERS; INTRINSIC ACCEPTOR; METAL TRANSITION; PAULI PARAMAGNETIC SHIFT;

FULLERENES;

EID: 0030168783     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3697(95)00417-3     Document Type: Article

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