Reliability study of Au-In transient liquid phase bonding for SiC power semiconductor packaging

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2011, Pages 260-263

  Grummel, Brian ^a,b   Mustain, Habib A ^a,c   Shen, Z John ^a   Hefner, Allen R ^b  

^a University of Central Florida   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOND THICKNESS; BONDING TEMPERATURES; ELECTRICAL RELIABILITY; HIGH-TEMPERATURE PACKAGING; POWER SEMICONDUCTOR PACKAGING; POWER SEMICONDUCTORS; TRANSIENT LIQUID PHASE BONDING; WIDE BAND GAP;

POWER ELECTRONICS; RELIABILITY; SEMICONDUCTOR DEVICES; SILICON CARBIDE; SOLDERING;

THERMAL CONDUCTIVITY;

EID: 84870534843     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2011.5890840     Document Type: Conference Paper

References (10)

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