Tungsten carbide as a diffusion barrier on silicon nitride active-metal-brazed substrates for silicon carbide power devices

Journal of Electronic Packaging

Volumn 131, Issue 3, 2009, Pages 0345021-0345023

  Mustain, H A ^a   Brown, William D ^a   Ang, Simon S ^a  

^a University of Arkansas   (United States)

Author keywords

Diffusion barrier; High temperature stability; Silicon nitride substrate; Tungsten carbide (WC)

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHIP SCALE PACKAGES; DIFFUSION BARRIERS; HIGH TEMPERATURE APPLICATIONS; METAL SUBSTRATES; METALLIZING; REFRACTORY METALS; SILICON CARBIDE; SILICON NITRIDE; THERMAL CONDUCTIVITY; TITANIUM; TITANIUM NITRIDE; TUNGSTEN CARBIDE; X RAY DIFFRACTION;

ACTIVE METALS; HIGH TEMPERATURE STABILITY; HIGH-TEMPERATURE APPLICATION; LOW COEFFICIENT OF THERMAL EXPANSIONS; METALLISATION; SILICON NITRIDE SUBSTRATE; SILICON-CARBIDE POWER DEVICES; SUBSTRATE MATERIAL; TITANIA; TUNGSTEN CARBIDE (WC);

THERMAL EXPANSION;

EID: 77955199820     PISSN: 10437398     EISSN: 15289044     Source Type: Journal    
DOI: 10.1115/1.3153582     Document Type: Article

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