Modulation of external electric field on surface states of topological insulator Bi2Se3 thin films

Applied Physics Letters

Volumn 101, Issue 22, 2012, Pages

  Liu, Genhua ^a,b   Zhou, Guanghui ^b   Chen, Yong Hai ^c  

^a CENTRAL SOUTH UNIVERSITY OF FORESTRY AND TECHNOLOGY   (China)

^b HUNAN NORMAL UNIVERSITY   (China)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIRAC FERMIONS; ELECTRIC FIELD STRENGTH; EXTERNAL ELECTRIC FIELD; FILM SURFACES; INCIDENT ANGLES; SPIN-DEPENDENT TRANSPORT PROPERTIES; SPIN-DOWN; SPIN-UP; TOPOLOGICAL INSULATORS; TOPOLOGICAL PHASE;

ELECTRIC FIELDS; INTERFACES (MATERIALS); SURFACE STATES; THIN FILMS; TRANSPORT PROPERTIES;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84870504705     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4767998     Document Type: Article

References (24)

1. M. Z. Hasan and C. L. Kane, Rev. Mod. Phys. 82, 3045 (2010). 10.1103/RevModPhys.82.3045
2. X. L. Qi and S. C. Zhang, Rev. Mod. Phys. 83, 1057 (2011). 10.1103/RevModPhys.83.1057
3. H. Zhang, C. X. Liu, X. L. Qi, X. Dai, Z. Fang, and S. C. Zhang, Nat. Phys. 5, 438 (2009). 10.1038/nphys1270
4. O. V. Yazyev, J. E. Moore, and S. G. Louie, Phys. Rev. Lett. 105, 266806 (2010). 10.1103/PhysRevLett.105.266806
5. Y. Xia, D. Qian, D. Hsieh, L. Wray, A. Pal, H. Lin, A. Bansil, D. Grauer, Y. S. Hor, R. J. Cava, and M. Z. Hasan, Nat. Phys. 5, 398 (2009). 10.1038/nphys1274
6. S. Cho, N. P. Butch, J. Paglione, and M. S. Fuhrer, Nano Lett. 11, 1925 (2011). 10.1021/nl200017f
7. G. S. Jenkins, A. B. Sushkov, D. C. Schmadel, N. P. Butch, P. Syers, J. Paglione, and H. D. Drew, Phys. Rev. B 82, 125120 (2010). 10.1103/PhysRevB.82. 125120
8. A. B. Sushkov, G. S. Jenkins, D. C. Schmadel, N. P. Butch, J. Paglione, and H. D. Drew, Phys. Rev. B 82, 125110 (2010). 10.1103/PhysRevB.82.125110
9. H. Z. Lu, W. Y. Shan, W. Yao, Q. Niu, and S. Q. Shen, Phys. Rev. B 81, 115407 (2010). 10.1103/PhysRevB.81.115407
10. J. Linder, T. Yokoyama, and A. Sudbo, Phys. Rev. B 80, 205401 (2009). 10.1103/PhysRevB.80.205401
11. C. X. Liu, H. J Zhang, B. Yan, X. L. Qi, T. Frauenheim, X. Dai, Z. Fang, and S. C. Zhang, Phys. Rev. B 81, 041307(R) (2010). 10.1103/PhysRevB.81.041307
12. R. Yu, W. Zhang, H. J. Zhang, S. C. Zhang, X. Dai, and Z. Fang, Science 329, 61 (2010). 10.1126/science.1187485
13. J. E. Moore and L. Balents, Phys. Rev. B 75, 121306(R) (2007). 10.1103/PhysRevB.75.121306
14. Y. Zhao, Y. Hu, L. Liu, Y. Zhu, and H. Guo, Nano Lett. 11, 2088 (2011). 10.1021/nl200584f
15. H. Z. Lu, J. Shi, and S. Q. Shen, Phys. Rev. Lett. 107, 076801 (2011). 10.1103/PhysRevLett.107.076801
16. J. Chen, H. J. Qin, F. Yang, J. Liu, T. Guan, F. M. Qu, G. H. Zhang, J. R. Shi, X. C. Xie, C. L. Yang, K. H. Wu, Y. Q. Li, and L. Lu, Phys. Rev. Lett. 105, 176602 (2010). 10.1103/PhysRevLett.105.176602
17. G. H. Liu, G. H. Zhou, and Y. H. Chen, Appl. Phys. Lett. 99, 222111 (2011). 10.1063/1.3664776
18. J. Wang, C. Z. Chang, H. Li, K. He, D. Zhang, M. Singh, X. C. Ma, N. Samarth, M. Xie, Q. K. Xue, and M. H. W. Chan, Phys. Rev. B 85, 045415 (2012). 10.1103/PhysRevB.85.045415
19. B. F. Gao, P. Gehring, M. Burghard, and K. Kern, Appl. Phys. Lett. 100, 212402 (2012). 10.1063/1.4719196
20. Y. Zhang and F. Zhai, Appl. Phys. Lett. 96, 172109 (2010). 10.1063/1.3421536
21. B. Zhou, H. Z. Lu, R. L. Chu, S. Q. Shen, and Q. Niu, Phys. Rev. Lett. 101, 246807 (2008). 10.1103/PhysRevLett.101.246807
22. Y. Zhang, K. He, C. Z. Chang, C. L. Song, L. L. Wang, X. Chen, J. F. Jia, Z. Fang, X. Dai, W. Y. Shan, S. Q. Shen, Q. Niu, X. L. Qi, S. C. Zhang, X. C. Ma, and Q. K. Xue, Nat. Phys. 6, 584 (2010). 10.1038/nphys1779
23. W. Y. Shan, H. Z. Lu, and S. Q. Shen, New J. Phys. 12, 043048 (2010). 10.1088/1367-2630/12/4/043048
24. L. B. Zhang, F. Cheng, F. Zhai, and K. Chang, Phys. Rev. B 83, 081402(R) (2011). 10.1103/PhysRevB.83.081402