Helical states of topological insulator Bi2Se3

Nano Letters

Volumn 11, Issue 5, 2011, Pages 2088-2091

  Zhao, Yonghong ^a,b   Hu, Yibin ^a   Liu, Lei ^c   Zhu, Yu ^c   Guo, Hong ^a  

^a MCGILL UNIVERSITY   (Canada)

^b SICHUAN NORMAL UNIVERSITY   (China)

^c Nanoacademic Technologies Inc   (Canada)

Author keywords

helical states; NEGF DFT; SOI; Topological insulator

Indexed keywords

3-FOLD SYMMETRY; BRILLOUIN ZONES; DIRAC POINT; ELECTRON SPINS; EXPERIMENTAL DATA; HELICAL STATE; HELICAL SURFACES; MATERIAL BULK; NEGF-DFT; QUANTUM TRANSPORT PROPERTIES; SOI; TILT ANGLE; TOPOLOGICAL INSULATOR; TWO-DIMENSIONAL PLANES;

DENSITY FUNCTIONAL THEORY; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; TRANSPORT PROPERTIES; TWO DIMENSIONAL;

ELECTRIC INSULATORS;

EID: 79955912340     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl200584f     Document Type: Article

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34. z of the slab is still identically zero. The nonvanishing average Φ on the two surfaces is an indication that even at the thickness of six QLs, there is still a very weak but nonzero interaction between the two surfaces across the slab. Investigating even thicker slabs by DFT requires prohibitively large computer resources beyond our ability.