Dynamic electrical characteristics of low-power ring oscillators constructed with inorganic nanoparticles on flexible plastics

ACS Applied Materials and Interfaces

Volumn 4, Issue 11, 2012, Pages 5839-5843

  Yun, Junggwon ^a   Cho, Kyoungah ^a   Kim, Sangsig ^a  

^a Korea University   (South Korea)

Author keywords

chalcogenide; electronic circuit; flexible; II VI semiconductor; nanoparticle; ring oscillator

Indexed keywords

BENDING CYCLES; ELECTRICAL CHARACTERISTIC; FLEXIBLE; FLEXIBLE PLASTICS; FLEXIBLE RING; II-VI SEMICONDUCTOR; INORGANIC NANOPARTICLE; LOW POWER; P-TYPE; RING OSCILLATOR; SINE-WAVE; STRAINED CONDITION; WAVE FORMS;

CHALCOGENIDES; ELECTRIC INVERTERS; NANOPARTICLES; NETWORKS (CIRCUITS); THIN FILM TRANSISTORS;

OSCILLATORS (ELECTRONIC);

INORGANIC COMPOUND; NANOPARTICLE; PLASTIC;

ARTICLE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; EQUIPMENT FAILURE; NANOTECHNOLOGY; OSCILLOMETRY; SEMICONDUCTOR; YOUNG MODULUS;

ELASTIC MODULUS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; INORGANIC CHEMICALS; NANOPARTICLES; NANOTECHNOLOGY; OSCILLOMETRY; PLASTICS; SEMICONDUCTORS;

EID: 84870489960     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am301483u     Document Type: Article

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