N-channel thin-film transistors constructed on plastic by solution processes of HgSe nanocrystals

Microelectronic Engineering

Volumn 86, Issue 10, 2009, Pages 2030-2033

  Jang, Jaewon ^a   Cho, Kyoungah ^a   Yun, Junggwon ^a   Kim, Sangsig ^a  

^a Korea University   (South Korea)

Author keywords

Flexible device; HgSe nanocrystals; Thin film transistor; UV ozone treatment

Indexed keywords

CHANNEL LAYERS; ELECTRICAL CHARACTERISTIC; FIELD-EFFECT MOBILITIES; FLEXIBLE DEVICE; HGSE NANOCRYSTALS; N-CHANNEL; ON/OFF CURRENT RATIO; PLASTIC SUBSTRATES; SOLID FILMS; SOLUTION PROCESS; SOLUTION-PROCESSED; UV/OZONE TREATMENT;

NANOCRYSTALS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; TRANSISTORS;

THIN FILM TRANSISTORS;

EID: 67649998638     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.01.027     Document Type: Article

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