Electronic and optical properties of mixed Be-chalcogenides

Journal of Physics and Chemistry of Solids

Volumn 74, Issue 2, 2013, Pages 181-188

  Khan, Imad ^a   Ahmad, Iftikhar ^a   Zhang, D ^b   Rahnamaye Aliabad, H A ^c   Jalali Asadabadi, S ^d  

^a UNIVERSITY OF MALAKAND   (Pakistan)

^b CALIFORNIA STATE UNIVERSITY   (United States)

^c HAKIM SABZEVARI UNIVERSITY   (Iran)

^d UNIVERSITY OF ISFAHAN   (Iran)

Author keywords

A. Alloys; A. Chalcogenides; C. Ab initio calculations; D. Electronic structure; D. Optical properties

Indexed keywords

AB INITIO CALCULATIONS; BE-CHALCOGENIDES; CHALCOGEN ATOMS; COMPOSITION RANGES; DIRECT BAND GAP; INDIRECT BAND GAP; LATTICE-MATCHED; OPTICALLY ACTIVE; OPTICALLY ACTIVE MATERIAL; TERNARY COMPOUNDS; UV SPECTRAL REGIONS;

CHALCOGENIDES; ELECTRONIC STRUCTURE; LIGHT EMITTING DIODES; OPTICAL PROPERTIES;

ENERGY GAP;

EID: 84870432232     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2012.08.012     Document Type: Article

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