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Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 321-324

Wide bandgap over 3 eV and high p-doping BeZnTe grown on InP substrates by molecular beam epitaxy

(6) Che, Song Bek a Nomura, Ichirou a Shinozaki, Wataru a Kikuchi, Akihiko a Shimomura, Kazuhiko a Kishino, Katsumi a

a SOPHIA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; BERYLLIUM ALLOYS; COMPOSITION; ENERGY GAP; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SUBSTRATES; TEMPERATURE;

ABSORPTION COEFFICIENT MEASUREMENTS; BANDGAP ENERGIES; HOLE CONCENTRATION; QUADRATIC EQUATION;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0033704119 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)00101-9 Document Type: Article

Times cited : (40)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.