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Volumn 184-185, Issue , 1998, Pages 11-15

Hetero-epitaxial growth of BexZn1-xSe on Si(0 0 1) and GaAs(0 0 1) substrates

Author keywords

Band gap; Be Compounds; Growth; MBE

Indexed keywords


EID: 4243765045     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-0248(98)80284-4     Document Type: Article
Times cited : (32)

References (24)
  • 14
    • 0002216319 scopus 로고
    • B. Gil, R.L. Aulombard (Eds.), World Scientific, Singapore
    • C. Vèrié, in: B. Gil, R.L. Aulombard (Eds.), Semiconductor Heteroepitaxy, World Scientific, Singapore, 1995, p. 73.
    • (1995) Semiconductor Heteroepitaxy , pp. 73
    • Vèrié, C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.