Nanocrystalline Bi2S3 thin films grown by thio-glycolic acid mediated successive ionic layer adsorption and reaction (SILAR) technique

Materials Science in Semiconductor Processing

Volumn 16, Issue 1, 2013, Pages 43-50

  Mageshwari, K ^a   Sathyamoorthy, R ^a  

^a KONGUNADU ARTS AND SCIENCE COLLEGE   (India)

Author keywords

Bi2S3 thin films; Electrical properties; Optical properties; Semiconductors; SILAR; X ray diffraction

Indexed keywords

BAND-TO-BAND TRANSITION; BISMUTH SULFIDE; CATIONIC CONCENTRATION; DEFECT LEVELS; ELECTRICAL RESISTIVITY MEASUREMENTS; FOUR-PROBE TECHNIQUES; GLASS SUBSTRATES; GRAIN SIZE; NANOCRYSTALLINE THIN FILMS; NANOCRYSTALLINES; NEGATIVE TEMPERATURE COEFFICIENT OF RESISTANCES; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL STUDY; ORTHORHOMBIC STRUCTURES; POLYCRYSTALLINE; SILAR; SUCCESSIVE IONIC LAYER ADSORPTION AND REACTIONS; THIOACETAMIDE; UNIFORM DISTRIBUTION;

ACTIVATION ENERGY; ADSORPTION; ATOMIC FORCE MICROSCOPY; BISMUTH; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; OPTICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SUBSTRATES; X RAY DIFFRACTION;

THIN FILMS;

EID: 84870415126     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2012.05.016     Document Type: Article

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