Thickness dependent properties of chemically deposited As2S3 thin films from thioacetamide bath

Materials Chemistry and Physics

Volumn 64, Issue 3, 2000, Pages 215-221

  Mane, R S ^a   Sankapal, B R ^a   Lokhande, C D ^a  

^a SHIVAJI UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY MEASUREMENT; ENERGY GAP; GRAIN SIZE AND SHAPE; LIGHT ABSORPTION; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GLASS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

ARSENIC TRISULPHIDE; CHEMICAL BATH DEPOSITION; FILM THICKNESS; QUANTUM SIZE EFFECT; THERMO EMF MEASUREMENT;

THIN FILMS;

EID: 0033743512     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(99)00261-8     Document Type: Article

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