Boosted gain of the differential amplifier using the second gate of the dual-gate a-IGZO TFTs

IEEE Electron Device Letters

Volumn 33, Issue 12, 2012, Pages 1729-1731

  Tai, Y H ^a   Chiu, H L ^a   Chou, L S ^a   Chang, C H ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Differential amplifier circuit; dual gate amorphous InGaZnO4 (a IGZO) thin film transistor (TFT)

Indexed keywords

AMORPHOUS INGAZNO; CIRCUIT DESIGNS; FEED-BACK LOOP; GATE ELECTRODES; PRIMARY GATES; THIN-FILM TRANSISTOR (TFTS); TOP GATE;

INTEGRATED CIRCUIT MANUFACTURE; REFRACTORY METAL COMPOUNDS; THIN FILM TRANSISTORS;

DIFFERENTIAL AMPLIFIERS;

EID: 84870410138     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2220955     Document Type: Article

References (13)

1. M. Kim, J. H. Jeong, H. J. Lee, T. K. Ahn, H. S. Shin, J.-S. Park, J. K. Jeong, Y.-G. Mo, and H. D. Kim, "High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper," Appl. Phys. Lett., vol. 90, no. 21, p. 212 114, May 2007.
2. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductor," Nature, vol. 432, no. 7016, pp. 488-492, Nov. 2004. (Pubitemid 39585210)
3. G. Baek, K. Abe, A. Kuo, H. Kumomi, and J. Kanicki, "Electrical properties and stability of dual-gate coplanar homojunction DC sputtered amorphous indium-gallium-zinc-oxide thin-film transistors and its application to AM-OLEDs," IEEE Trans. Electron Devices, vol. 58, no. 12, pp. 4344-4353, Dec. 2011.
4. A. S. Sedra and K. C. Smith, Microelectronic Circuit, 5th ed. New York: Oxford, 2004, pp. 258-259.
5. K.-S. Son, J.-S. Jung, K.-H. Lee, T.-S. Kim, J.-S. Park, K. C. Park, J.-Y. Kwon, B. Koo, and S.-Y. Lee, "Highly stable double-gate Ga-In-Zn-O thin-film transistor," IEEE Electron Device Lett., vol. 31, no. 8, pp. 812-814, Aug. 2010.
6. N. D. Jankovic and V. Brajovic, " Vth compensated AMOLED pixel employing dual-gate TFT driver," Electron. Lett., vol. 47, no. 7, pp. 456-457, Mar. 2011.
7. Y.-H. Tai, L.-S. Chou, H.-L. Chiu, and B.-C. Chen, "Three-transistor AMOLED pixel circuit with threshold voltage compensation function using dual-gate IGZO TFT," IEEE Electron Device Lett., vol. 33, no. 3, pp. 393-395, Mar. 2012.
8. M. J. Seok, M. H. Choi, M. Mativenga, D. Geng, D. Y. Kim, and J. Jang, "A full-swing a-IGZO TFT-based inverter with atop-gate-bias-induced depletion load," IEEE Electron Device Lett., vol. 32, no. 8, pp. 1089-1091, Aug. 2011.
9. C. H. Park, K. H. Lee, M. S. Oh, K. Lee, S. Im, B. H. Lee, and M. M. Sung, "Dual gate ZnO-based thin-film transistors operating at 5 V: NOR gate application," IEEE Electron Device Lett., vol. 30, no. 1, pp. 30-32, Jan. 2009.
10. M. H. Choi, M. J. Seok, M. Mativenga, D. Geng, D. H. Kang, and J. Jang, "A full-swing a-IGZO TFT-based inverter with a top gate-induced depletion load," in Proc. Soc. Inf. Display Int. Symp. Tech. Dig., 2011, pp. 1144-1147.
11. H.-W. Zan, W.-T. Chen, C.-C. Yeh, H.-W. Hsueh, C.-C. Tsai, and H.-F. Meng, "Dual gate indium-gallium-zinc-oxide thin film transistor with an unisolated floating metal gate for threshold voltage modulation and mobility enhancement," Appl. Phys. Lett., vol. 98, no. 15, p. 153 506, Apr. 2011.
12. Y.-H. Tai, H.-L. Chiu, and L.-S. Chou, "Active matrix touch sensor detecting time-constant change implemented by dual-gate IGZO TFTs," Solid State Electron., vol. 72, pp. 67-72, Jun. 2012.
13. S.-M. Yoon, S. Yang, M.-K. Ryu, C.-W. Byun, S.-W. Jung, S.-H. K. Park, C.-S. Hwang, and K.-I. Cho, "Oxide semiconductorbased organic/inorganic hybrid dual-gate nonvolatile memory thin-film transistor," IEEE Trans. Electron Devices, vol. 58, no. 7, pp. 2135-2142, Jul. 2011.