Gas-dependent bandgap and electrical conductivity of Cu2O thin films

Solar Energy Materials and Solar Cells

Volumn 108, Issue , 2013, Pages 230-234

  Zhang, Liangmin ^a   McMillon, Lyndsey ^b   McNatt, Jeremiah ^b  

^a ARKANSAS STATE UNIVERSITY   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

Author keywords

Bandgap; Cuprous oxide thin film; Feimi level; Hall effect; Oxide semiconductor; P type conductivity

Indexed keywords

ACCEPTOR LEVELS; CUPROUS OXIDE; DENSITY OF HOLES; ELECTRICAL CONDUCTIVITY; FEIMI LEVEL; FERMI-DIRAC STATISTICS; HIGH ELECTRICAL CONDUCTIVITY; OXIDE SEMICONDUCTOR; OXYGEN-RICH CONDITIONS; P-TYPE CONDUCTION; P-TYPE CONDUCTIVITY; PHOTOVOLTAIC APPLICATIONS; REACTIVE MAGNETRON SPUTTERING; THEORETICAL MODELS; WIDE BANDGAPS;

DENSITY FUNCTIONAL THEORY; ELECTRIC CONDUCTIVITY; HALL EFFECT; HOLE MOBILITY; REFRACTIVE INDEX; THIN FILMS;

ENERGY GAP;

EID: 84870255192     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2012.05.010     Document Type: Conference Paper

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