P-type conduction in nitrogen-doped SnO2 films grown by thermal processing of tin nitride films

Applied Physics A: Materials Science and Processing

Volumn 109, Issue 2, 2012, Pages 267-271

  Pan, S S ^a   Wang, S ^a   Zhang, Y X ^a   Luo, Y Y ^a   Kong, F Y ^a   Xu, S C ^a   Xu, J M ^a   Li, G H ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION; HIGH TEMPERATURE; NITROGEN-DOPED; OXIDATION TEMPERATURE; P-TYPE; P-TYPE CONDUCTION; SELF-COMPENSATION EFFECTS; THERMAL OXIDATION; TIN NITRIDE; TIN NITRIDE FILMS;

DOPING (ADDITIVES); NITRIDES; OXIDATION; PHOTOELECTRONS; RAPID THERMAL ANNEALING; TIN; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS FILMS;

EID: 84870248564     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-012-7288-5     Document Type: Article

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