ESD characterization of atomically-thin graphene

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn , Issue , 2012, Pages

  Li, Hong ^a   Russ, Christian C ^b   Liu, Wei ^a   Johnsson, David ^b   Gossner, Harald ^b   Banerjee, Kaustav ^a  

^a University of California   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; BIASING EFFECTS; EQUIVALENT CURRENT DENSITY; ESD PROTECTION; INTRINSIC PROPERTY; NOVEL APPLICATIONS; SEMICONDUCTOR PRODUCTS; SHORT-PULSE;

DESIGN; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE;

GRAPHENE;

EID: 84869797479     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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