Low temperature aqueous solution route to reliable p-type doping in ZnO with K: Growth chemistry, doping mechanism, and thermal stability

Journal of Physical Chemistry C

Volumn 116, Issue 45, 2012, Pages 24239-24247

  Tay, Chuan Beng ^a   Tang, Jie ^a   Nguyen, Xuan Sang ^b   Huang, Xiao Hu ^a   Chai, Jian Wei ^c   Venkatesan, Venky T ^a   Chua, Soo Jin ^a,b,c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b SINGAPORE MIT ALLIANCE   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AQUEOUS SOLUTION ROUTE; AS-GROWN FILMS; DEVICE APPLICATION; DOPING MECHANISM; ELECTRICAL CHARACTERISTIC; GROWTH CHEMISTRY; HIGH CONCENTRATION; LOW TEMPERATURES; N-TYPE CONDUCTIVITY; OUT-DIFFUSION; P-TYPE; P-TYPE CONDUCTIVITY; P-TYPE DOPING; SOLUTION SYNTHESIS; THERMAL BEHAVIORS; THERMAL-ANNEALING; UPPER LIMITS; ZNO; ZNO FILMS;

DEFECTS; SEMICONDUCTING FILMS; SOLUTIONS; TEMPERATURE; ZINC OXIDE;

SEMICONDUCTOR DOPING;

EID: 84869486425     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp3070757     Document Type: Article

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