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Volumn , Issue , 2012, Pages 1049-1054

Analysis of blister formation in spatial ALD Al2O3 for silicon surface passivation

Author keywords

amorphous materials; charge carrier lifetime; dielectric films; hydrogen; photovoltaic cells; silicon

Indexed keywords

AFM; ALUMINUM OXIDES; BLISTER FORMATION; HYDROGEN DIFFUSION; MINORITY CARRIER; SILICON SURFACES; SURFACE PASSIVATION;

EID: 84869470330     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2012.6317783     Document Type: Conference Paper
Times cited : (24)

References (12)
  • 11
    • 36448999074 scopus 로고
    • Dissociation kinetics of hydrogen passivated (100) si/SiO2 interface defects
    • J.H. Stathis, "Dissociation kinetics of hydrogen passivated (100) Si/SiO2 interface defects,", Journal of Applied Physics, Vol. 77, 6205, 1995.
    • (1995) Journal of Applied Physics , vol.77 , pp. 6205
    • Stathis, J.H.1
  • 12
    • 0001291950 scopus 로고    scopus 로고
    • 2 interface with molecular hydrogen: Simultaneous action of passivation and dissociation
    • 2 interface with molecular hydrogen: Simultaneous action of passivation and dissociation", Journal of Applied Physics, Vol. 88, 489, 2000.
    • (2000) Journal of Applied Physics , vol.88 , pp. 489
    • Stesmans, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.