Effect of Thickness of SnO2:F over Layer on Certain Physical Properties of ZnO:Al Thin Films for Opto-electronic Applications

Journal of Materials Science and Technology

Volumn 28, Issue 11, 2012, Pages 999-1003

  Ravikumar, P ^a   Ravichandran, K ^a   Sakthivel, B ^a  

^a A V V M SRI PUSHPAM COLLEGE   (India)

Author keywords

Atomic force microscopy (AFM); Electrical properties; Optical properties; Semiconductor materials; SnO2; ZnO thin films

Indexed keywords

ABSORPTION EDGES; AZO FILMS; BILAYERED FILMS; COST EFFECTIVE; ELECTRICAL STUDIES; FLUORINE DOPED TIN OXIDE; LAYER THICKNESS; OPTOELECTRONIC APPLICATIONS; SINGLE LAYER FILMS; SNO2; SPRAY-PYROLYSIS TECHNIQUES; ZINC VACANCY; ZNO; ZNO THIN FILM; ZNO:AL THIN FILMS;

ATOMIC FORCE MICROSCOPY; FLUORINE; OPTICAL FILMS; OPTICAL PROPERTIES; OXIDE FILMS; SEMICONDUCTOR MATERIALS; SPRAY PYROLYSIS; TIN; TIN OXIDES; X RAY DIFFRACTION; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 84869407190     PISSN: 10050302     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1005-0302(12)60164-9     Document Type: Article

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