Growth pathways in ultralow temperature Ge nucleation from Au

Nano Letters

Volumn 12, Issue 11, 2012, Pages 5867-5872

  Kim, B J ^a   Wen, C Y ^b   Tersoff, J ^c   Reuter, M C ^c   Stach, E A ^b,d   Ross, F M ^c  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b PURDUE UNIVERSITY   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

Catalytic growth; chemical vapor deposition; germanium; low temperature growth; vapor liquid solid growth; vapor solid solid growth

Indexed keywords

CATALYTIC GROWTH; CRYSTALLINE GE; DEVICE INTEGRATION; GE ADDITION; IN-SITU ELECTRON MICROSCOPY; LIQUID STATE; LOW TEMPERATURE GROWTH; MATERIALS SYSTEMS; NANOSTRUCTURE FORMATION; REACTION PATHWAYS; SEMICONDUCTOR NANOSTRUCTURES; TEMPERATURE-SENSITIVE; TIME-SCALES; ULTRA LOW TEMPERATURES; VAPOR-LIQUID-SOLID GROWTH; VERY LOW TEMPERATURES;

CHEMICAL VAPOR DEPOSITION; ELECTRON MICROSCOPY; GERMANIUM; LIQUIDS; NANOWIRES; NUCLEATION; REACTION RATES; TEMPERATURE; VAPORS;

SEMICONDUCTOR GROWTH;

EID: 84869179688     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl303225a     Document Type: Article

References (32)

1. Li, Y.; Qian, F.; Xiang, J.; Lieber, C. M. Nanowire electronic and optoelectronic devices Mater. Today 2006, 9, 18
2. Hu, J.; Odom, T. W.; Lieber, C. M. Chemistry and Physics in One-Dimension: Synthesis and Properties of Nanowires and Nanotubes Acc. Chem. Res. 1999, 32, 435
3. Samuelson, L. Nanowire electronic and optoelectronic devices Mater. Today 2003, 6, 22
4. Fan, H.; Werner, J.; Zacharias, P. M. Semiconductor nanowires: from self organization to patterned growth Small 2006, 2, 700
5. Chan, C. K.; Zhang, X. F.; Cui, Y. High Capacity Li-ion Battery Anodes Using Ge Nanowires Nano Lett. 2008, 8, 307
6. Holmes, J. D.; Johnston, K. P.; Doty, R. C.; Korgel, B. A. Control of thickness and orientation of solution-grown silicon nanowires Science 2000, 287, 1471
7. Zheng, G.; Patolsky, F.; Cui, Yi; Wang, W. U.; Lieber, C. M. Multiplexed electrical detection of cancer markers with nanowire sensor arrays Nat. Biotechnol. 2005, 23, 1294
8. Hochbaum, A. I.; Chen, R.; Delgado, R. D.; Liang, W.; Garnett, E. C.; Najarian, M.; Majumdar, A.; Yang, P. Enhanced thermoelectric performance of rough silicon nanowires Nature 2008, 451, 163
9. Wang, D. W.; Dai, H. J. Low-temperature synthesis of single-crystal germanium nanowires by Chemical Vapor Deposition Angew. Chem., Int. Ed. 2002, 41, 4783
10. Wagner, R. S.; Ellis, W. C. Vapor-liquid-solid mechanism of single crystal growth Appl. Phys. Lett. 1964, 4, 89
11. Schmidt, V.; Wittemann, J. V.; Gösele, U. Growth, Thermodynamics, and Electrical Properties of Silicon Nanowires Chem. Rev. 2010, 110, 361
12. Lensch-Falk, J. L.; Hemesath, E R.; Perea, D. E.; Lauhon, L. J. Alternative catalysts for VSS growth of silicon and germanium nanowires J. Mater. Chem. 2009, 19, 849
13. Kodambaka, S.; Tersoff, J.; Reuter, M. C.; Ross, F. M. Germanium nanowire growth below the eutectic temperature Science 2007, 316, 729
14. Bootsma, G. A.; Gassen, H. J. A quantitative study on the growth of silicon whiskers from silane and germanium whiskers from germane J. Cryst. Growth 1971, 10, 223
15. Miyamoto, Y.; Hirata, M. Growth of new form germanium whiskers Jpn. J. Appl. Phys. 1975, 14, 1419
16. Greytak, A. B.; Lauhon, L. J.; Gudiksen, M. S.; Lieber, C. M. Growth and transport properties of complementary germanium nanowire field-effect transistors Appl. Phys. Lett. 2004, 84, 4176
17. Adhikari, H.; Marshall, A. F.; Chidsey, C. E. D.; McIntyre, P. C. Germanium nanowire epitaxy: Shape and orientation control Nano Lett. 2006, 6, 318
18. Li, C. B.; Usami, K.; Muraki, T.; Mizuta, H.; Oda, S. The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate Appl. Phys. Lett. 2008, 93, 041917
19. 1-x core-shell nanowire heterostructures Appl. Phys. Lett. 2009, 95, 033101
20. Sierra-Sastre, Y.; Dayeh, S. A.; Picraux, S. T.; Batt, C. A. Epitaxy of Ge nanowires grown from biotemplated Au nanoparticle catalysts ACS Nano 2010, 4, 1209
21. Adhikari, H.; McIntyre, P. C.; Marshall, A. F.; Chidsey, C. E. D. Conditions for subeutectic growth of Ge nanowires by the vapor-liquid-solid mechanism J. Appl. Phys. 2007, 102, 094311
22. Adhikari, H.; Marshall, A. F.; Goldthorpe, I. A.; Chidsey, C. E. D.; McIntyre, P. C. Metastability of Au-Ge liquid nanocatalysts: Ge vapor-liquid-solid nanowire growth far below the bulk eutectic temperature ACS Nano 2007, 1, 415
23. Gamalski, A. D.; Tersoff, J.; Sharma, R.; Ducati, C.; Hofmann, S. Formation of metastable liquid catalyst during subeutectic growth of germanium nanowires Nano Lett. 2010, 10, 2972
24. Ross, F. M. Controlling nanowire structures through real time growth studies Rep. Prog. Phys. 2011, 73, 114501
25. Karlsson, L. S. Size determination of Au aerosol nanoparticles by off-line TEM/STEM observations J. Nanopart. Res. 2006, 8, 971
26. Kim, J.; Tersoff, J.; Wen, C.-Y.; Reuter, M. C.; Stach, E. A.; Ross, F. M. Determination of size effects during the phase transition of a nanoscale Au-Si eutectic Phys. Rev. Lett. 2009, 103, 155701
27. Kim, B. J.; Tersoff, J.; Kodambaka, S.; Reuter, M. C.; Stach, E. A.; Ross, F. M. Kinetics of individual nucleation events observed in nanoscale Vapor-Liquid-Solid growth Science 2008, 322, 1070
28. Moffatt, W. G. The Handbook of binary phase diagrams; General Electric: Schenectady, NY, 1978.
29. Chevalier, P. Y. A Thermodynamic Evaluation of the Au-Ge and Au-Si systems Thermochim. Acta 1989, 141, 217
30. Gamalski, A. D.; Tersoff, J.; Sharma, R.; Ducati, C.; Hofmann, S. Metastable crystalline AuGe catalysts formed during isothermal germanium nanowire growth Phys. Rev. Lett. 2012, 108, 255702; and references therein
31. Turnbull, D.; Fisher, J. C. Rate of Nucleation in Condensed Systems J. Chem. Phys. 1949, 17, 71
32. Wen, C.-Y.; Reuter, M. C.; Bruley, J.; Tersoff, J.; Kodambaka, S.; Stach, E. A.; Ross, F. M. Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires Science 2009, 326, 1247