SCOPUS 정보 검색 플랫폼

ECS Transactions

Volumn 16, Issue 10, 2009, Pages 893-904

High Ge content SiGe alloys: Doping and contact formation

(3) Kasper, E a Oehme, M a Lupaca Schomber, J a

a UNIVERSITY OF STUTTGART (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; GERMANIUM COMPOUNDS; MICROELECTRONICS; SILICIDES; SILICON;

CHIP-TO-CHIP COMMUNICATIONS; CONTACT FORMATION; ELECTRICAL ACTIVATION; FERMI LEVEL PINNING; INTERFACE LAYER; LOW TEMPERATURES; METAL CONTACTS; PROCESS COMPATIBILITY;

SI-GE ALLOYS;

EID: 63149103441 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/1.2986850 Document Type: Conference Paper

Times cited : (4)

References (12)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.