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Applied Physics Letters

Volumn 100, Issue 6, 2012, Pages

Enhancement of photoluminescence signal from ultrathin layers with silicon nanocrystals

(6) Dyakov, S A a Zhigunov, D M b Hartel, A c Zacharias, M c Perova, T S a Timoshenko, V Yu b

a TRINITY COLLEGE DUBLIN (Ireland)

b MOSCOW STATE UNIVERSITY (Russian Federation)

c UNIVERSITY OF FREIBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYER THICKNESS; PHOTOLUMINESCENCE INTENSITIES; PHOTOLUMINESCENCE MEASUREMENTS; PHOTOLUMINESCENCE SIGNALS; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; SILICON DIOXIDE LAYERS; SILICON NANOCRYSTALS; THEORETICAL SIMULATION; ULTRATHIN LAYERS;

BUFFER LAYERS; COMPUTER SIMULATION; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

OPTICAL WAVEGUIDES;

EID: 84857209625 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3682537 Document Type: Article

Times cited : (15)

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