Efficient hydrogenated amorphous silicon thin-film solar cells using zinc oxide deposited by atomic layer deposition as a protective interfacial layer

Journal of Physical Chemistry C

Volumn 116, Issue 44, 2012, Pages 23231-23235

  Lee, Young Joo ^a   Choi, Min Seung ^a   Kim, Dong Ho ^a   Kim, Chang Su ^a   Song, Myung Kwan ^a   Kang, Jae Wook ^a   Jeong, Yongsoo ^a   Nam, Kee Seok ^a   Park, Sung Gyu ^a   Kwon, Se Hun ^b   Ryu, Seung Yoon ^c   Kwon, Jung Dae ^a  

^a Korea Institute of Material Science   (South Korea)

^b Pusan National University   (South Korea)

^c SunMoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; CELL EFFICIENCY; ELECTRICAL IMPEDANCE; FLUORINE DOPED TIN OXIDE; INTERFACIAL LAYER; P-TYPE; PLASMA DAMAGE; THIN-FILM SOLAR CELLS; TRANSMITTANCE MEASUREMENTS; ZINC OXIDE (ZNO); ZNO; ZNO BUFFER LAYER;

AMORPHOUS SILICON; BUFFER LAYERS; DEPOSITS; DESCALING; GLASS; HYDROGENATION; NANOCOMPOSITES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SILICON SOLAR CELLS; TIN; TIN OXIDES; ZINC OXIDE;

ATOMIC LAYER DEPOSITION;

EID: 84868712248     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp306360h     Document Type: Article

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