Simulation model and parameter extraction of Field-Stop (FS) IGBT

Microelectronics Reliability

Volumn 52, Issue 12, 2012, Pages 2920-2931

  Tang, Yong ^a   Wang, Bo ^a   Chen, Ming ^a   Liu, Binli ^a  

^a NAVAL UNIVERSITY OF ENGINEERING   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING CONCENTRATION; ELECTRICAL CHARACTERISTIC; ELECTRO-THERMAL MODEL; EXCESS CARRIERS; MEASURED RESULTS; SIMPLIFIED METHOD; SIMULATION MODEL; SWITCHING TRANSIENT; TAIL CURRENTS; TEMPERATURE CHARACTERISTIC;

CARRIER CONCENTRATION; COMPUTER SIMULATION; DATA PROCESSING; PARAMETER EXTRACTION;

POWER QUALITY;

EID: 84868683086     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2012.07.025     Document Type: Article

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