Gate hysteresis originating from atomic layer deposition of Al2O3 onto suspended carbon nanotube field-effect transistors

Physica Status Solidi (B) Basic Research

Volumn 248, Issue 11, 2011, Pages 2664-2667

  Muoth, Matthias ^a   Döring, Valentin ^a   Hierold, Christofer ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Atomic layer deposition; Carbon nanotubes; Hysteresis; Suspended

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; ATOMS; CARBON NANOTUBES; HYSTERESIS; TRANSISTORS;

CARBON NANOTUBE TRANSISTORS; ELECTRICAL DEVICES; ELECTRICAL FIELD STRENGTH; FABRICATION METHOD; HYSTERETIC EFFECTS; NANOSCALE DIMENSIONS; NANOTUBE TRANSISTORS; SUSPENDED;

CARBON NANOTUBE FIELD EFFECT TRANSISTORS;

EID: 84868661660     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201100088     Document Type: Article

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