Electrostatics and electrical transport in semiconductor nanowire Schottky diodes

Applied Physics Letters

Volumn 101, Issue 18, 2012, Pages

  Hsu, Cheng Han ^a   Wang, Qiaoming ^a   Tao, Xin ^a   Gu, Yi ^a  

^a WASHINGTON STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT-VOLTAGE RELATIONS; DEPLETION REGION; DOPING LEVELS; ELECTRICAL TRANSPORT; ELECTRICAL TRANSPORT CHARACTERISTICS; ELECTROSTATIC PROPERTIES; EXPERIMENTAL MEASUREMENTS; FINITE ELEMENT SIMULATIONS; GUIDING DEVICE; IDEALITY FACTORS; NANOSCALE DEVICE; SCHOTTKY; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES; SCHOTTKY JUNCTIONS; SEMICONDUCTOR NANOWIRE;

ANALYTICAL MODELS; COMPUTER SIMULATION; DISSOCIATION; ELECTROSTATICS; MODELS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; THREE DIMENSIONAL COMPUTER GRAPHICS;

NANOWIRES;

EID: 84868658972     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4765653     Document Type: Article

References (24)

1. U. Landman, R. N. Barnett, A. G. Scherbakov, and P. Avouris, Phys. Rev. Lett. 85, 1958 (2000). 10.1103/PhysRevLett.85.1958
2. F. Leonard and A. A. Talin, Phys. Rev. Lett. 97, 026804 (2006). 10.1103/PhysRevLett.97.026804
3. F. Leonard, A. A. Talin, B. S. Swartzentruber, and S. T. Picraux, Phys. Rev. Lett. 102, 106805 (2009). 10.1103/PhysRevLett.102.106805
4. J. S. Hwang, F. Donatini, J. Pernot, R. Thierry, P. Ferret, and L. S. Dang, Nanotechnology 22, 475704 (2011). 10.1088/0957-4484/22/47/475704
5. Y. Gu, E. S. Kwak, J. L. Lensch, J. E. Allen, T. W. Odom, and L. J. Lauhon, Appl. Phys. Lett. 87, 043111 (2005). 10.1063/1.1996851
6. P. Y. Fan, U. K. Chettiar, L. Y. Cao, F. Afshinmanesh, N. Engheta, and M. L. Brongersma, Nat. Photonics 6, 380 (2012). 10.1038/nphoton.2012.108
7. D. Martin, A. Heinzig, M. Grube, L. Geelhaar, T. Mikolajick, H. Riechert, and W. M. Weber, Phys. Rev. Lett. 107, 216807 (2011). 10.1103/PhysRevLett.107. 216807
8. A. Soudi, P. Dhakal, and Y. Gu, Appl. Phys. Lett. 96, 253115 (2010). 10.1063/1.3456390
9. J. E. Allen, E. R. Hemesath, D. E. Perea, J. L. Lensch-Falk, Z. Y. Li, F. Yin, M. H. Gass, P. Wang, A. L. Bleloch, R. E. Palmer, and L. J. Lauhon, Nat. Nanotechnol. 3, 168 (2008). 10.1038/nnano.2008.5
10. K. Sarpatwari, N. S. Dellas, O. O. Awadelkarim, and S. E. Mohney, Solid-State Electron. 54, 689 (2010). 10.1016/j.sse.2010.03.006
11. A. Soudi, E. H. Khan, J. T. Dickinson, and Y. Gu, Nano Lett. 9, 1844 (2009). 10.1021/nl803830n
12. B. K. Meyer, H. Alves, D. M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Strassburg, M. Dworzak, U. Haboeck, and A. V. Rodina, Phys. Status Solidi B 241, 231 (2004). 10.1002/pssb.200301962
13. S. Kasap and P. Capper, Springer Handbook of Electronic and Photonic Materials (Springer, New York, 2006).
14. P. C. Chang and J. G. Lu, Appl. Phys. Lett. 92, 212113 (2008). 10.1063/1.2937847
15. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, 1981).
16. C. Canali, G. Majni, R. Minder, and G. Ottaviani, IEEE Trans. Electron Devices 22, 1045 (1975). 10.1109/T-ED.1975.18267
17. See supplementary material at http://dx.doi.org/10.1063/1.4765653 E-APPLAB-101-103245 for details on the mobility model and the fitting.
18. O. Hayden, G. F. Zheng, P. Agarwal, and C. M. Lieber, Small 3, 2048 (2007). 10.1002/smll.200700600
19. F. Leonard and J. Tersoff, Phys. Rev. Lett. 83, 5174 (1999). 10.1103/PhysRevLett.83.5174
20. S. K. Cheung and N. W. Cheung, Appl. Phys. Lett. 49, 85 (1986). 10.1063/1.97359
21. S. N. Das, J. H. Choi, J. P. Kar, K. J. Moon, T. Il Lee, and J. M. Myoung, Appl. Phys. Lett. 96, 092111 (2010). 10.1063/1.3339883
22. J. Kim, J. H. Yun, C. S. Han, Y. J. Cho, J. Park, and Y. C. Park, Appl. Phys. Lett. 95, 143112 (2009). 10.1063/1.3245310
23. A. Motayed, A. V. Davydov, M. D. Vaudin, I. Levin, J. Melngailis, and S. N. Mohammad, J. Appl. Phys. 100, 024306 (2006). 10.1063/1.2215354
24. W. F. Yang, S. J. Lee, G. C. Liang, R. Eswar, Z. Q. Sun, and D. L. Kwong, IEEE Trans. Nanotechnol. 7, 728 (2008). 10.1109/TNANO.2008.2003353