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Volumn 14, Issue 23, 2012, Pages 7929-7933

Investigation of Al-doped silicon nitride-based semiconductor and its shrinkage mechanism

(8) Mao, Zhiyong a Zhu, Yingchun a Zeng, Yi a Xu, Fangfang a Liu, Zhen b Ma, Guohong b Du, Zuliang c Geng, Wentong d

a SHANGHAI INSTITUTE OF CERAMICS (China)

b SHANGHAI UNIVERSITY (China)

c HENAN UNIVERSITY (China)

d UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84868515215 PISSN: None EISSN: 14668033 Source Type: Journal
DOI: 10.1039/c2ce25758k Document Type: Article

Times cited : (12)

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