메뉴 건너뛰기




Volumn 93, Issue 5, 2010, Pages 1364-1367

Optical properties of heavily al-doped single-crystal Si3N 4 nanobelts

Author keywords

[No Author keywords available]

Indexed keywords

DOPING MECHANISM; PHOTOLUMINESCENCE EXCITATION SPECTRUM; RED-SHIFTED; SINGLE-CRYSTAL SI;

EID: 77951684783     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2009.03517.x     Document Type: Article
Times cited : (34)

References (25)
  • 3
    • 0001660705 scopus 로고    scopus 로고
    • Green photoluminescence from er-containing amorphous SiN thin films
    • A. R. Zanatta L. A. O. Nunes Green Photoluminescence from Er-Containing Amorphous SiN Thin Films Appl. Phys. Lett., 72, 3127 3129 (1998).
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 3127-3129
    • Zanatta, A.R.1    Nunes, L.A.O.2
  • 4
    • 0000423783 scopus 로고    scopus 로고
    • Synthesis of silicon nitride nanorods using carbon nanotube as a template
    • W. Han, S. Fan, Q. Li, B. Qu D. Yu Synthesis of Silicon Nitride Nanorods using Carbon Nanotube as a Template Appl. Phys. Lett., 71, 2271 2273 (1997). (Pubitemid 127615744)
    • (1997) Applied Physics Letters , vol.71 , Issue.16 , pp. 2271-2273
    • Han, W.1    Fan, S.2    Li, Q.3    Gu, B.4    Zhang, X.5    Yu, D.6
  • 6
    • 0037461218 scopus 로고    scopus 로고
    • Synthesis of silicon nitride nanowires directly from the silicon substrates
    • DOI 10.1016/S0009-2614(03)00428-7, PII S0009261403004287
    • H. Kim, J. Park H. Yang Synthesis of Silicon Nitride Nanowires Directly from the Silicon Substrates Chem. Phys. Lett., 372, 269 274 (2003). (Pubitemid 36412516)
    • (2003) Chemical Physics Letters , vol.372 , Issue.1-2 , pp. 269-274
    • Kim, H.Y.1    Park, J.2    Yang, H.3
  • 9
    • 27644598969 scopus 로고    scopus 로고
    • Synthesis of single-crystalline silicon nitride nanobelts via catalyst-assisted pyrolysis of a polysilazane
    • DOI 10.1111/j.1551-2916.2005.00069.x
    • W. Yang, Z. Xie, H. Miao, H. Ji, L. Zhang L. An Synthesis of Single-Crystalline Silicon Nitride Nanobelts via Catalyst-Assisted Pyrolysis of a Polysilazane J. Am. Ceram. Soc., 88 [2] 466 469 (2005). (Pubitemid 43026585)
    • (2005) Journal of the American Ceramic Society , vol.88 , Issue.2 , pp. 466-469
    • Yang, W.1    Xie, Z.2    Miao, H.3    Zhang, L.4    Ji, H.5    An, L.6
  • 11
    • 0015587560 scopus 로고
    • Optical properties of silicon nitride
    • H. R. Philipp Optical Properties of Silicon Nitride J. Electrochem. Soc., 120, 295 300 (1973).
    • (1973) J. Electrochem. Soc. , vol.120 , pp. 295-300
    • Philipp, H.R.1
  • 13
    • 0022705889 scopus 로고
    • On the nature of deep centers responsible for the memory effect and luminescence of a-SiNx with x≤ 4/3
    • P. A. Pundur, J. G. Shavalgin V. A. Gritsenko On the Nature of Deep Centers Responsible for the Memory Effect and Luminescence of a-SiNx with x≤ 4/3 Phys. Status Solidi A, 94, K107 12 (1986).
    • (1986) Phys. Status Solidi A , vol.94 , pp. 107-12
    • Pundur, P.A.1    Shavalgin, J.G.2    Gritsenko, V.A.3
  • 14
    • 0022717185 scopus 로고
    • Effect of hydrogen on photoluminescence spectra of silicon nitride amorphous films
    • V. V. Vasilev, I. P. Mikhailovskii K. K. Svitashev Effect of Hydrogen on Photoluminescence Spectra of Silicon Nitride Amorphous Films Phys. Status Solidi, A, 95, K37 42 (1986).
    • (1986) Phys. Status Solidi, A , vol.95 , pp. 37-42
    • Vasilev, V.V.1    Mikhailovskii, I.P.2    Svitashev, K.K.3
  • 15
    • 0029276029 scopus 로고
    • Correlations between ESR and photoluminescence in slightly hydrogenated silicon nitride
    • C. Savall, J. C. Bruyere J. Krautwurm Correlations Between ESR and Photoluminescence in Slightly Hydrogenated Silicon Nitride J. Phys. D: Appl. Phys., 28, 565 570 (1995).
    • (1995) J. Phys. D: Appl. Phys. , vol.28 , pp. 565-570
    • Savall, C.1    Bruyere, J.C.2    Krautwurm, J.3
  • 16
    • 0029323656 scopus 로고
    • Optical properties of silicon nitride films deposited by hot filament chemical vapor deposition
    • S. V. Deshpande, E. Gulari, S. W. Brown S. C. Rand Optical Properties of Silicon Nitride Films Deposited by Hot Filament Chemical Vapor Deposition J. Appl. Phys., 77, 6534 6541 (1995).
    • (1995) J. Appl. Phys. , vol.77 , pp. 6534-6541
    • Deshpande, S.V.1    Gulari, E.2    Brown, S.W.3    Rand, S.C.4
  • 17
    • 0000233731 scopus 로고    scopus 로고
    • Luminescence processes in amorphous hydrogenated silicon-nitride nanometric multilayers
    • F. Giorgis, C. F. Pirri, C. Vinegoni L. Pavesi Luminescence Processes in Amorphous Hydrogenated Silicon-Nitride Nanometric Multilayers Phys. Rev., B60, 11572 11576 (1999).
    • (1999) Phys. Rev. , vol.60 , pp. 11572-11576
    • Giorgis, F.1    Pirri, C.F.2    Vinegoni, C.3    Pavesi, L.4
  • 19
    • 34248367437 scopus 로고    scopus 로고
    • Controlled al-doped single-crystalline silicon nitride nanowires synthesized via pyrolysis of polymer precursors
    • DOI 10.1021/jp070642
    • W. Yang, H. Wang, S. Liu, Z. Xie L. An Controlled Al-Doped Single-Crystalline Silicon Nitride Nanowires Synthesized via Pyrolysis of Polymer Precursors J. Phys. Chem., B111, 4156 4160 (2007). (Pubitemid 46732965)
    • (2007) Journal of Physical Chemistry B , vol.111 , Issue.16 , pp. 4156-4160
    • Yang, W.1    Wang, H.2    Liu, S.3    Xie, Z.4    An, L.5
  • 22
    • 0025957694 scopus 로고
    • Electronic structure of silicon nitride
    • J. Robertson Electronic Structure of Silicon Nitride Philos. Mag., B63, 47 77 (1991).
    • (1991) Philos. Mag. , vol.63 , pp. 47-77
    • Robertson, J.1
  • 24
    • 0027866829 scopus 로고
    • Electronic structure of defects in amorphous silicon nitride
    • J. Robertson Electronic Structure of Defects in Amorphous Silicon Nitride Mater. Res. Soc. Symp. Proc., 284, 65 76 (1993).
    • (1993) Mater. Res. Soc. Symp. Proc. , vol.284 , pp. 65-76
    • Robertson, J.1
  • 25
    • 0001217886 scopus 로고
    • Si and N dangling bond creation in silicon nitride thin films
    • W. L. Warren, J. Robertson J. Kanicki Si and N Dangling Bond Creation in Silicon Nitride Thin Films Appl. Phys. Lett., 63, 2686 2687 (1993).
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 2686-2687
    • Warren, W.L.1    Robertson, J.2    Kanicki, J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.