Laser on porous silicon after oxidation by irradiation and annealing

Optics Communications

Volumn 281, Issue 20, 2008, Pages 5229-5233

  Huang, Wei Qi ^a   Zhang, Rong Tao ^a   Wang, Hai Xu ^a   Jin, Feng ^a   Xu, Li ^a   Qin, Shui Jie ^a   Wu, Ke Yue ^a   Liu, Shi Rong ^b   Qin, Cao Jian ^b  

^a GUIZHOU UNIVERSITY   (China)

^b INSTITUTE OF GEOCHEMISTRY   (China)

Author keywords

Annealing; Interface states; Laser irradiation; Oxide structure of silicon; Stimulated emission

Indexed keywords

ANNEALING; IRRADIATION; LASERS; LIGHT EMISSION; LUMINESCENCE; NONMETALS; OPTICAL DESIGN; POROUS SILICON; SILICON; STIMULATED EMISSION;

ANNEALING TREATMENTS; EMISSION INTENSITIES; GAIN COEFFICIENTS; INTERFACE STATES; LASER IRRADIATION; LASER IRRADIATIONS; LORENTZIAN SHAPES; NANO CRYSTALS; OPTICALLY PUMPED; OXIDE STRUCTURE OF SILICON; OXIDE STRUCTURES; PHOTOLUMINESCENCE (PL); SAMPLE LENGTH; THRESHOLD BEHAVIOR; TRAP STATES;

FULL WIDTH AT HALF MAXIMUM;

EID: 50449109282     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optcom.2008.07.034     Document Type: Article

References (11)

1. Pavesi L., et al. Nature (London) 408 (2000) 440
2. Pavlov S.G., Hovenier J.N., Carder D.A., et al. Phys. Rev. Lett. 96 (2006) 037404
3. Tsybeskov L., Moore K.L., Hall D.G., and Fauchet P.M. Phys. Rev. B 54 (1996) R8361
4. Canham L.T., et al. Appl. Phys. Lett. 61 (1992) 2563
5. Boyaraz O., and Jalali B. Opt. Express 12 (2004) 5269
6. Rong H., et al. Nature (London) 433 (2005) 292
7. Huang W.Q., and Liu S.R. Chin. Phys. 15 (2006) 390
8. Campbell I.H., and Fauchet P.M. Solid State Commun. 58 (1986) 739
9. Wolkin M.V., Jorne J., and Fauchet P.M. Phys. Rev. Lett. 82 (1999) 197
10. Huang W.Q., and Liu S.R. Mod. Phys. Lett. B 19 (2005) 1767
11. Li S.S., Xia J.B., and Hirose K. J. Appl. Phys. 98 (2005) 083704