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Volumn 92, Issue 22, 2008, Pages
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Stimulated emission from trap electronic states in oxide of nanocrystal Si
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
ELECTRONIC STATES;
LIGHT EMISSION;
LUMINESCENCE;
NANOCRYSTALLINE ALLOYS;
NANOCRYSTALS;
NANOSTRUCTURES;
NANOTECHNOLOGY;
NONMETALS;
PHOTOEXCITATION;
POROUS SILICON;
SILICON;
SILICON COMPOUNDS;
STEEL ANALYSIS;
STIMULATED EMISSION;
(100) SILICON;
AMERICAN INSTITUTE OF PHYSICS (AIP);
ANNEALING TREATMENTS;
COHERENT EMISSIONS;
EMISSION PEAKING;
HALF MAXIMUM;
LORENTZIAN SHAPES;
NANO CRYSTALS;
NANOCRYSTAL-SI (NC-SI);
PHOTOLUMINESCENCE (PL);
PHOTOLUMINESCENCE (PL) EMISSIONS;
PINNING EFFECTS;
RELATIVE POSITIONING;
SILICON NANOCRYSTAL;
TRAP STATES;
FULL WIDTH AT HALF MAXIMUM;
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EID: 44849135058
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2937835 Document Type: Article |
Times cited : (42)
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References (9)
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