Depressed scattering across grain boundaries in single crystal graphene

Applied Physics Letters

Volumn 101, Issue 17, 2012, Pages

  Chen, Jiao ^a   Jin, Zhi ^a   Ma, Peng ^a   Wang, Hong ^b   Wang, Haomin ^c   Shi, Jingyuan ^a   Peng, Songang ^a   Liu, Xinyu ^a   Ye, Tianchun ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC MATERIALS; EXTRACTING INFORMATION; HIGH-SPEED TRANSISTORS; LOW TEMPERATURES; QUANTUM DEVICE; QUANTUM PROPERTIES; TRANSPORT MEASUREMENTS; WEAK LOCALIZATION;

CHEMICAL VAPOR DEPOSITION; GRAIN BOUNDARIES; GRAPHENE; QUANTUM HALL EFFECT; QUANTUM THEORY;

ELECTRIC PROPERTIES;

EID: 84868015418     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4758464     Document Type: Article

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