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Volumn 4, Issue 10, 2012, Pages 5338-5345

Optimization of chemical structure of schottky-type selection diode for crossbar resistive memory

Author keywords

crossbar; RRAM; Schottky barrier; Schottky diode; selection device; sneak current

Indexed keywords

CROSSBAR; RRAM; SCHOTTKY BARRIERS; SCHOTTKY DIODES; SELECTION DEVICE;

EID: 84867817041     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am301293v     Document Type: Article
Times cited : (11)

References (23)
  • 19
    • 84867775089 scopus 로고
    • Barbottin, G. Vapaille, A. Elsevier Science Publishers B.V. Amsterdam
    • P. Hesto In Instabilities in Silicon Devices; Barbottin, G.; Vapaille, A., Eds.; Elsevier Science Publishers B.V.: Amsterdam, 1986; Vol. 1, pp 295-297.
    • (1986) Instabilities in Silicon Devices , vol.1 , pp. 295-297
    • Hesto, P.1
  • 20
    • 79956085043 scopus 로고
    • Barbottin, G. Vapaille, A. Elsevier Science Publishers B.V. Amsterdam
    • P. Hesto In Instabilities in Silicon Devices; Barbottin, G.; Vapaille, A., Eds.; Elsevier Science Publishers B.V.: Amsterdam, 1986; Vol. 1, p 275.
    • (1986) Instabilities in Silicon Devices , vol.1 , pp. 275
    • Hesto, P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.