Study of the thermoelectric properties of lead selenide doped with Boron, gallium, indium, or thallium

Journal of the American Chemical Society

Volumn 134, Issue 42, 2012, Pages 17731-17738

  Zhang, Qian ^a   Cao, Feng ^a   Lukas, Kevin ^a   Liu, Weishu ^a   Esfarjani, Keivan ^b   Opeil, Cyril ^a   Broido, David ^a   Parker, David ^c   Singh, David J ^c   Chen, Gang ^b   Ren, Zhifeng ^a  

^a BOSTON COLLEGE   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CONDUCTIVITY; ELECTRON CONCENTRATION; FIGURE OF MERITS; GRAIN BOUNDARY DENSITIES; HALL MEASUREMENTS; LATTICE THERMAL CONDUCTIVITY; LEAD SELENIDE; P-TYPE; POWER FACTORS; ROOM TEMPERATURE; THERMOELECTRIC PROPERTIES;

BALL MILLING; ELECTRIC CONDUCTIVITY; ELECTRIC POWER FACTOR; GRAIN BOUNDARIES; SEMICONDUCTING LEAD COMPOUNDS; THALLIUM; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

DOPING (ADDITIVES);

BORON; GALLIUM; INDIUM; LEAD SELENIDE; METAL DERIVATIVE; THALLIUM; UNCLASSIFIED DRUG;

ARTICLE; ATOM; CONTROLLED STUDY; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRON; FERMION; PHONON; ROOM TEMPERATURE; THERMAL CONDUCTIVITY;

EID: 84867813428     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja307910u     Document Type: Article

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