SCOPUS 정보 검색 플랫폼

Energy and Environmental Science

Volumn 5, Issue 2, 2012, Pages 5510-5530

Resonant levels in bulk thermoelectric semiconductors

(3) Heremans, Joseph P a,b Wiendlocha, Bartlomiej a,c Chamoire, Audrey M a

a Ohio State University (United States)

b OHIO STATE UNIVERSITY (United States)

c AGH UNIVERSITY OF SCIENCE AND TECHNOLOGY (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE ENGINEERING; COMPOUND SEMICONDUCTORS; CRYOGENIC TEMPERATURES; DELOCALIZATIONS; DENSITY OF STATE; ELECTRON ENERGIES; ELECTRONIC DENSITY; ELECTRONIC STRUCTURE CALCULATIONS; HYBRIDIZATION EFFECTS; IMPURITY LEVEL; IMPURITY STATE; POTENT MECHANISM; POWER FACTORS; RESONANT LEVELS; RESONANT SCATTERING; STRONGLY CORRELATED ELECTRON SYSTEM; THERMOELECTRIC SEMICONDUCTOR; THERMOPOWER ENHANCEMENT;

ELECTRIC POWER FACTOR; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; KONDO EFFECT; SUPERCONDUCTING MATERIALS;

THERMOELECTRIC POWER;

ELECTRON; ELECTRONIC EQUIPMENT; SEMICONDUCTOR INDUSTRY; TEMPERATURE EFFECT;

EID: 84856756898 PISSN: 17545692 EISSN: 17545706 Source Type: Journal
DOI: 10.1039/c1ee02612g Document Type: Review

Times cited : (821)

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