Features of the electrical compensation of bismuth impurities in PbSe

Semiconductors

Volumn 32, Issue 7, 1998, Pages 689-691

  Nemov, S A ^a   Gavrikova, T A ^a   Zykov, V A ^a   Osipov, P A ^a   Proshin, V I ^a  

^a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040041654     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187484     Document Type: Article

References (10)

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2. L. I. Bytenskiǐ, V. I. Kaǐdanov, R. B. Mel'nik, S. A. Nemov, and Yu. I. Ravich, Fiz. Tekh. Poluprovodn. 14, 74 (1980) [Sov. Phys. Semicond. 14, 40 (1980)].
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5. Yu. J. Ravich, B. A. Efimov, and I. A, Smirnov, Semiconducting Lead Chalcogenides [Plenum Press, New York, 1970; Nauka, Moscow, 1968].
6. N. Kh. Abrikosov and L. E. Shelimova, IV-VI Semiconducting Materials [in Russian] (Nauka, Moscow, 1975).
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10. V. I. Kaǐdanov, S. A. Nemov, and Yu. I. Ravich, Fiz. Tekh. Poluprovodn. 28, 369 (1994) [Semiconductors 28, 223 (1994)].