Behaviour of group IIIA impurities in PbTe: Implications to improve thermoelectric efficiency

Journal of Physics D: Applied Physics

Volumn 43, Issue 40, 2010, Pages

  Xiong, K ^a   Lee, G ^a   Gupta, R P ^a   Wang, W ^a   Gnade, B E ^a   Cho, Kyeongjae ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE STATE; FIRST-PRINCIPLES CALCULATION; IMPURITIES IN; IMPURITY LEVEL; INDUCED DEFECTS; LOCALIZED STATE; PBTE; THERMOELECTRIC EFFICIENCY;

DOPING (ADDITIVES); ELECTRON MOBILITY; ELECTRONIC STRUCTURE; GALLIUM;

IMPURITIES;

EID: 78249267863     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/40/405403     Document Type: Article

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